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參數(shù)資料
| 型號： | KM732V688L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Kx32 Synchronous SRAM |
| 中文描述： | 64Kx32同步SRAM |
| 文件頁數(shù)： | 15/16頁 |
| 文件大小： | 497K |
| 代理商： | KM732V688L |
PRELIMINARY
KM732V696/L
64Kx32 Synchronous SRAM
Rev 1.0
- 15 -
May 1997
APPLICATION INFORMATION
DEPTH EXPANSION
The Samsung 64Kx32 Synchronous Pipelined Burst SRAM has two additional chip selects for simple depth expansion.
This permits easy secondary cache upgrades from 64K depth to 128K depth without extra logic.
Data
Address
CLK
ADS
64-Bits
Microprocessor
CS
2
CS
2
CLK
ADSC
WEx
OE
CS
1
Address
Data
ADV
ADSP
64Kx32
SPB
SRAM
(Bank 0)
CS
2
CS
2
CLK
ADSC
WEx
OE
CS
1
Address
Data
ADV
ADSP
64Kx32
SPB
SRAM
(Bank 1)
CLK
Address
Cache
Controller
A
[0:16]
A
[16]
A
[0:15]
A
[16]
A
[0:15]
I/O
[0:63]
* Please refer to attached timing diagram 2
Clock
ADSP
ADDRESS
[0:n]
Data Out
(Bank 0)
Bank 0 is selected by
CS
2
, and Bank 1 deselected by
CS
2
Q1-1
Q1-2
Q1-4
Q1-3
OE
Data Out
(Bank 1)
t
SS
t
SH
A1
A2
WRITE
CS
1
A
n+1
ADV
Q2-2
Q2-4
Q2-3
t
AS
t
AH
t
WS
t
WH
t
ADVS
t
ADVH
t
OE
t
LZOE
t
HZC
Bank 0 is deselected by
CS
2
, and Bank 1 selected by
CS
2
t
CSS
t
CSH
CD
t
LZC
Q2-1
INTERLEAVE READ TIMING
(Refer to non-interleave write timing for interleave write timing)
Don
′
t Care
Undefined
*NOTES n = 14 32K depth, 15 64K depth, 16 128K depth, 17 256K depth
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