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參數(shù)資料
| 型號： | KM68512BLI-L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Kx8 bit Low Power CMOS Static RAM |
| 中文描述： | 64Kx8位低功耗CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 126K |
| 代理商： | KM68512BLI-L |
Revision 0.0
January 1998
KM68512B Family
CMOS SRAM
2
Advance
64Kx8 bit Low Power CMOS Static RAM
FEATURES
The KM68512B family is fabricated by SAMSUNG
′
s advanced
CMOS process technology. The family support various operat-
ing temperature ranges and small package type for user flexi-
bility of system design. The family also support low data
retention voltage for battery back-up operation with low data
retention current.
GENERAL DESCRIPTION
Process Technology : 0.4
μ
m CMOS
Organization : 64Kx8
Power Supply Voltage : Single 5V
±
10%
Low Data Retention Voltage : 2V(Min)
Three state output and TTL Compatible
Package Type : 32-TSOP I -0820F
PIN DESCRIPTION
Name
Function
A
0
~A
15
Address Inputs
WE
Write Enable Input
CS
1
, CS
2
Chip Select Inputs
OE
Output Enable Input
I/O
1
~I/O
8
Data Inputs/Outputs
Vcc
Power
Vss
Ground
N.C
No Connection
PRODUCT FAMILY
Product Family
Operating Temperature
V
CC
Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max)
10
μ
A
15
μ
A
Operating
(I
CC2
, Max)
KM68512BL-L
Commercial(0~70
°
C)
Industrial(-40~85
°
C)
5V
±
0.5V
55/70
60mA
32-TSOP1-F
KM68512BLI-L
70
FUNCTIONAL BLOCK DIAGRAM
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
A11
A9
A8
A13
WE
CS2
A15
VCC
NC
NC
A14
A12
A7
A6
A5
A4
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
32-TSOP
Type1 - Forward
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Precharge circuit.
Memory array
512 rows
128
×
8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A0
A1
A2
A3
A9
A11
A10
A4
A5
A6
A7
A8
A12
A14
I/O1
Data
cont
Data
cont
I/O8
A13
A15
CS
WE
OE
Control
logic
CS2
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