參數(shù)資料
型號(hào)： KM681002BT-12
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
元件分類： DC/DC變換器
英文描述： RP10 (EW) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 5V; 4:1 Wide Input Voltage Range; 10 Watts Output Power; 1.6kVDC Isolation; Fixed Operating Frequency; Six-Sided Continuous Shield; Standard 50.8 x25.4x10.2mm Package; Efficiency to 84%
中文描述： 128Kx8位高速靜態(tài)RAM（5V的工作），革命銷出。在經(jīng)營(yíng)商業(yè)和工業(yè)溫度范圍。
文件頁(yè)數(shù)： 7/8頁(yè)
文件大小： 171K
代理商： KM681002BT-12
KM681002B, KM681002BI
CMOS SRAM
PRELIMINARY
PPreliminary
Rev 2.0
- 7 -
February 1998
NOTES
(WRITE CYCLE)
1. All write cycle timing is referenced from the last valid address to the first transition address.
2. A write occurs during the overlap of a low CS and WE. A write begins at the latest transition CS going low and WE going low ;
A write ends at the earliest transition CS going high or WE going high. t
WP
is measured from the beginning of write to the end of
write.
3. t
CW
is measured from the later of CS going low to end of write.
4. t
AS
is measured from the address valid to the beginning of write.
5. t
WR
is measured from the end of write to the address change. t
WR
applied in case a write ends as CS or WE going high.
6. If OE, CS and WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase
of the output must not be applied because bus contention can occur.
7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
8. If CS goes low simultaneously with WE going or after WE going low, the outputs remain high impedance state.
9. Dout is the read data of the new address.
10. When CS is low : I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be
applied.
TIMING WAVEFORM OF WRITE CYCLE(3)
(CS
=
Controlled)
Address
CS
t
AW
t
DW
t
DH
Data Valid
WE
Data in
Data out
High-Z
High-Z(8)
t
CW(3)
t
WP(2)
t
AS(4)
t
WC
t
WR(5)
High-Z
High-Z
t
LZ
t
WHZ(6)
FUNCTIONAL DESCRIPTION
* NOTE : X means Don
′
t Care.
CS
WE
OE
Mode
I/O Pin
Supply Current
H
X
X*
Not Select
High-Z
I
SB
, I
SB1
L
H
H
Output Disable
High-Z
I
CC
L
H
L
Read
D
OUT
I
CC
L
L
X
Write
D
IN
I
CC
相關(guān)PDF資料
PDF描述
KM681002B-8 128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range.
KM681002BT-8 128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range.
KM681002BTI-8 128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range.
KM681002B-10 128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range.
KM681002B-12 128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM681002BT-8 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range.
KM681002BTI-10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range.
KM681002BTI-12 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range.
KM681002BTI-8 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range.
KM681002C 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges.
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