參數(shù)資料
型號: KM681002B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128K x8 Bit High Speed CMOS Static RAM(128K x8位高速CMOS 靜態(tài) RAM)
中文描述: 128K的x8位高速CMOS靜態(tài)RAM(128K的x8位高速的CMOS靜態(tài)RAM)的
文件頁數(shù): 2/8頁
文件大小: 128K
代理商: KM681002B
KM681002B, KM681002BI
CMOS SRAM
PRELIMINARY
PPreliminary
Rev 2.0
- 2 -
February 1998
128K x 8 Bit High-Speed CMOS Static RAM
GENERAL DESCRIPTION
The KM681002B is a 1,048,576-bit high-speed Static Random
Access Memory organized as 131,072 words by 8 bits. The
KM681002B uses 8 common input and output lines and has an
output enable pin which operates faster than address access
time at read cycle. The device is fabricated using SAMSUNG
s
advanced CMOS process and designed for high-speed circuit
technology. It is particularly well suited for use in high-density
high-speed system applications. The KM681002B is packaged
in a 400mil 32-pin plastic SOJ or TSOP2 forward.
FEATURES
Fast Access Time 8,10,12ns(Max.)
Low Power Dissipation
Standby (TTL) : 50mA(Max.)
(CMOS) : 10mA(Max.)
Operating KM681002B - 8 : 160mA(Max.)
KM681002B - 10 : 155mA(Max.)
KM681002B - 12 : 150mA(Max.)
Single 5.0V
±
10% Power Supply
TTL Compatible Inputs and Outputs
I/O Compatible with 3.3V Device
Fully Static Operation
- No Clock or Refresh required
Three State Outputs
Center Power/Ground Pin Configuration
Standard Pin Configuration
KM681002BJ : 32-SOJ-400
KM681002BT: 32-TSOP2-400F
KM681002B -8/10/12
Commercial Temp.
KM681002BI -8/10/12
Industrial Temp.
ORDERING INFORMATION
Clk Gen.
I/O
1
~I/O
8
CS
WE
OE
FUNCTIONAL BLOCK DIAGRAM
R
Data
Cont.
Column Select
CLK
Gen.
Pre-Charge Circuit
Memory Array
256 Rows
512x8 Columns
I/O Circuit
PIN FUNCTION
Pin Name
Pin Function
A
0
- A
16
Address Inputs
WE
Write Enable
CS
Chip Select
OE
Output Enable
I/O
1
~ I/O
8
Data Inputs/Outputs
V
CC
Power(+5.0V)
V
SS
Ground
N.C
No Connection
PIN CONFIGURATION
(Top View)
SOJ/
TSOP2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A
16
A
15
A
14
A
13
OE
I/O
8
I/O
7
Vss
Vcc
I/O
6
I/O
5
A
12
A
11
A
10
A
9
A
8
A
0
A
1
A
2
A
3
CS
I/O
1
I/O
2
Vcc
Vss
I/O
3
I/O
4
WE
A
4
A
5
A
6
A
7
A
10
A
11
A
12
A
13
A
14
A
15
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
16
相關(guān)PDF資料
PDF描述
KM681002BI 128K x8 Bit High Speed CMOS Static RAM(128K x8位高速CMOS 靜態(tài) RAM)
KM681002CL-12 128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges.
KM681002CL-15 128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges.
KM681002CL-20 128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges.
KM681002CLI 128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM681002B-10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range.
KM681002B-12 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range.
KM681002B-8 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range.
KM681002BI-10 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range.
KM681002BI-12 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range.