參數(shù)資料
型號: KFN2G16Q2M-DEB6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: MuxOneNAND FLASH MEMORY
中文描述: MuxOneNAND閃存
文件頁數(shù): 44/124頁
文件大?。?/td> 1550K
代理商: KFN2G16Q2M-DEB6
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
44
This Read/Write register describes the NAND Flash block address which will be loaded, programmed, or erased.
F100h, default = 0000h
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
DFS
Reserved(00000)
FBA
Device
Number of Block
FBA
2Gb DDP
2048
DFS[15] & FBA[9:0]
1Gb
1024
FBA[9:0]
Start Address1 Information
Register Information
Description
FBA
NAND Flash Block Address
DFS
Flash Core of DDP (Device Flash Core Select)
2.8.10 Start Address2 Register F101h (R/W)
This Read/Write register describes the BufferRAM of DDP (Device BufferRAM Select)
F101h, default = 0000h
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
DBS
Reserved(000000000000000)
Start Address2 Information
Register Information
Description
DBS
BufferRAM of DDP (Device BufferRAM Select)
Comp
Comp
DBS
DFS
DDP_OPT
GND
CE
C
L
SRAM
BUFFER
FLASH
CORE
Comp
Comp
DBS
DFS
DDP_OPT
V
DD
CE
C
L
SRAM
BUFFER
FLASH
CORE
CE
INT
CHIP 1
CHIP 2
INT
INT
2.8.9 Start Address1 Register F100h (R/W)
相關PDF資料
PDF描述
KFN1G16Q2M-DED5 MuxOneNAND FLASH MEMORY
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KFN2G16Q2M-DED5 MuxOneNAND FLASH MEMORY
相關代理商/技術參數(shù)
參數(shù)描述
KFN2G16Q2M-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
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