• 參數(shù)資料
    型號(hào): KFN2G16Q2M-DEB6
    廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
    英文描述: MuxOneNAND FLASH MEMORY
    中文描述: MuxOneNAND閃存
    文件頁數(shù): 120/124頁
    文件大?。?/td> 1550K
    代理商: KFN2G16Q2M-DEB6
    MuxOneNAND1G(KFM1G16Q2M-DEB5)
    MuxOneNAND2G(KFN2G16Q2M-DEB5)
    FLASH MEMORY
    120
    Because the pull-up resistor value is related to tr(INT) an appropriate value can obtained with the following reference charts.
    7.1.3 Determining Rp Value
    t
    I
    Rp(ohm)
    Ibusy
    tr[us]
    KFG1G16Q2M @ Vcc = 1.8V, Ta = 25
    °
    C , C
    L
    = 30pF
    1K
    10K
    20K
    30K
    0.089
    tf[ns]
    0.7727
    1.345
    1.788
    3.77
    3.77
    3.77
    3.77
    1.75
    0.18
    0.09
    40K
    50K
    2.142
    2.431
    3.77
    3.77
    0.045
    0.06
    0.036
    Open(100K)
    5.420
    0.000
    Busy State
    Ready Vcc
    VOH
    tf
    tr
    VOL
    Vss
    ~50k ohm
    INT
    Internal Vcc
    Rp
    INT pol = ’High’
    t
    I
    Rp(ohm)
    Ibusy
    tr[us]
    KFN2G16Q2M @ Vcc = 1.8V, Ta = 25
    °
    C , C
    L
    = 30pF
    1K
    10K
    20K
    30K
    0.161
    tf[ns]
    1.238
    1.97
    2.458
    8.73
    8.73
    8.73
    8.73
    1.75
    0.18
    0.09
    40K
    50K
    2.807
    3.07
    8.73
    8.73
    0.045
    0.06
    0.036
    Open(100K)
    3.785
    0.000
    相關(guān)PDF資料
    PDF描述
    KFN1G16Q2M-DED5 MuxOneNAND FLASH MEMORY
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    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    KFN2G16Q2M-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
    KFN2G16Q2M-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
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