參數(shù)資料
型號： KFN1G16Q2M-DEB6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MuxOneNAND FLASH MEMORY
中文描述： MuxOneNAND閃存
文件頁數(shù)： 79/124頁
文件大?。?/td> 1550K
代理商： KFN1G16Q2M-DEB6
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
79
The Copy-Back Program Operation with Random Data Input in MuxOneNAND consists of 2 phase, Load data into DataRAM, Modify
data and program into designated page. Data from the source page is saved in one of the on-chip DataRAM buffers and modified by
the host, then programmed into the destination page.
As shown in the flow chart, data modification is possible upon completion of load operation. ECC is also available at the end of load
operation. Therefore, using hardware ECC of MuxOneNAND, accumulation of 1 bit error can be avoided.
Copy-Back Program Operation with Random Data Input will be effectively utilized at modifying certain bit, byte, word, or sector of
source page to destination page while it is being copied.
Copy-Back Program Operation with Random Data Input Flow Chart
Start
Write ’DFS*, FBA’ of Flash
Add: F100h DQ=DFS, FBA
Write ’FPA, FSA’ of Flash
Add: F107h DQ=FPA, FSA
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=BSA, BSC
Select DataRAM for DDP
Add: F101h DQ=DBS
Write ’Load’ Command
Add: F220h
DQ=0000h or 0013h
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Read Controller
Status Register
Add: F240h DQ[10]=Error
DQ[10]=0
NO
YES
* DBS, DFS is for DDP
Map Out
Write 0 to interrupt register
Add: F241h DQ=0000h
Copy back completed
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Read Controller
Status Register
Add: F240h DQ[10]=Error
DQ[10]=0
Copy back Error
YES
NO
Random Data Input
Write ’FBA’ of Flash
Add: F100h DQ=FBA
Write ’FPA, FSA’ of Flash
Add: F107h DQ=FPA, FSA
Write ’Program’ Command
Add: F220h
DQ=0080h or 001Ah
Write 0 to interrupt register
Add: F241h DQ=0000h
Add: Random Address in
Selected DataRAM
DQ=Data
3.9.1 Copy-Back Program Operation with Random Data Input
相關(guān)PDF資料
PDF描述
KFM2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DED5 MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DED5 MuxOneNAND FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFN1G16Q2M-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
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