參數(shù)資料
型號： KFN1G16Q2M-DEB6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MuxOneNAND FLASH MEMORY
中文描述： MuxOneNAND閃存
文件頁數(shù)： 76/124頁
文件大小： 1550K
代理商： KFN1G16Q2M-DEB6
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
76
Program Operation Flow Diagram
During the execution of the Internal Program Routine, the host is not required to provide any further controls or timings. Furthermore,
all commands, except a Reset command, will be ignored. A reset during a program operation will cause data corruption at the corre-
sponding location.
If a program error is detected at the completion of the Internal Program Routine, map out the block, including the page in error, and
copy the target data to another block. An error is signaled if DQ10 = "1" of Controller Status Register(F240h) .
Data input from the Host to the DataRAM can be done at any time during the Internal Program Routine after "Start" but before the
"Write Program Command" is written.
Start
Data Input
Completed
Write ’DFS*, FBA’ of Flash
Add: F100h DQ=DFS*’, FBA
Write ’FPA, FSA’ of Flash
Add: F107h DQ=FPA, FSA
Select DataRAM for DDP
1)
Add: F101h DQ=DBS*
Write Data into DataRAM
2)
ADD: DP DQ=Data-in
Program completed
Write ’Program’ Command
Add: F220h
DQ=0080h or 001Ah
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Read Controller
Status Register
Add: F240h DQ[10]=Error
DQ[10]=0
Program Error
YES
NO
NO
YES
* DBS, DFS is for DDP
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
*
Note 1) This must happen before data input
2) Data input could be done anywhere between "Start" and "Write Program Command".
Write 0 to interrupt register
Add: F241h DQ=0000h
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=BSA, BSC
相關PDF資料
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KFM2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
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KFN2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
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相關代理商/技術(shù)參數(shù)
參數(shù)描述
KFN1G16Q2M-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
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