參數(shù)資料
型號(hào): KFN1G16Q2M-DEB6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: MuxOneNAND FLASH MEMORY
中文描述: MuxOneNAND閃存
文件頁數(shù): 68/124頁
文件大?。?/td> 1550K
代理商: KFN1G16Q2M-DEB6
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
68
An Unlocked block can be programmed or erased. The status of an unlocked block can be changed to locked or locked-tight using
the appropriate software command. (locked-tight state can be achieved via lock-tight command which follows lock command)
Only one block can be released from lock state to unlock state with Unlock command and addresses. The unlocked block can be
changed with new lock command. Therefore, each block has its own lock/unlock/lock-tight state.
Unlock Command Sequence:
Start block address+Unlock block command (0023h)
Unlocked
3.4.3.2 Locked NAND Array Write Protection State
A Locked block cannot be programmed or erased. All blocks default to a locked state following a Cold or Warm Reset. Unlocked
blocks can be changed to locked using the Lock block command. The status of a locked block can be changed to unlocked or
locked-tight using the appropriate software command.
Lock Command Sequence:
Start block address+Lock block command (002Ah)
Locked
3.4.3.1 Unlocked NAND Array Write Protection State
相關(guān)PDF資料
PDF描述
KFM2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DED5 MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DED5 MuxOneNAND FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFN1G16Q2M-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY