參數(shù)資料
型號: KFN1G16Q2M-DEB6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: MuxOneNAND FLASH MEMORY
中文描述: MuxOneNAND閃存
文件頁數(shù): 108/124頁
文件大?。?/td> 1550K
代理商: KFN1G16Q2M-DEB6
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
108
NOTES:
1. AA = Address of address register
CA = Address of command register
LCD = Load Command
LMA = Address of memory to be loaded
BA = Address of BufferRAM to load the data
SA = Address of status register
2. “In progress” and “complete” refer to status register
3. Status reads in this figure is asynchronous read, but status read in synchronous mode is also supported.
6.6 Load Operation Timing
See AC Characteristics Tables 5.7 and 5.8
t
CER
Load Command Sequence (last two cycles)
WE
CE
CLK
t
AVDP
t
DS
t
DH
t
CH
t
WPL
t
WPH
t
WC
SA
BA
Completed
Da+n
LCD
CA
LMA
AA
ADQ0~15
OE
Read Data
V
IL
t
WEA
t
AAVDS
t
AAVDH
t
RD
INT
bit
t
CS
AVD
RDY
Hi-Z
t
CER
t
CEZ
t
CEZ
相關(guān)PDF資料
PDF描述
KFM2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DED5 MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DED5 MuxOneNAND FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFN1G16Q2M-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY