參數(shù)資料
型號: KFN1G16Q2M-DEB6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: MuxOneNAND FLASH MEMORY
中文描述: MuxOneNAND閃存
文件頁數(shù): 106/124頁
文件大?。?/td> 1550K
代理商: KFN1G16Q2M-DEB6
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
106
6.4 Asynchronous Read
(VA Transition After AVD Low)
See AC Characteristics Table 5.5
6.3 Asynchronous Read
(VA Transition Before AVD Low)
See AC Characteristics Table 5.5
t
OE
VA
Valid RD
t
CE
t
OEH
t
OEZ
t
AAVDH
t
AVDP
t
AA
t
AAVDS
CE
OE
WE
A/DQ0:
A/DQ15
AVD
Hi-Z
Hi-Z
RDY
t
RC
t
WEA
t
CA
t
CEZ
t
CER
t
AVDO
Hi-Z
NOTE:
VA=Valid Read Address, RD=Read Data.
See timing diagram 6.14, 6.15 for tASO
t
OE
VA
Valid RD
t
OEH
t
OEZ
t
ACC
t
AAVDH
t
AVDP
t
AAVDS
CE
OE
WE
A/DQ0:
A/DQ15
AVD
t
WEA
t
CEZ
t
CA
t
CER
t
AVDO
Hi-Z
Hi-Z
RDY
t
RC
t
CE
Hi-Z
NOTE:
VA=Valid Read Address, RD=Read Data.
See timing diagram 6.14, 6.15 for tASO
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