參數(shù)資料
型號： KFM2G16Q2M-DEB5
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MuxOneNAND FLASH MEMORY
中文描述： MuxOneNAND閃存
文件頁數(shù)： 77/124頁
文件大小： 1550K
代理商： KFM2G16Q2M-DEB5
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
77
The Copy-Back program is configured to quickly rewrite data stored in one page without utilizing memory other than MuxOneNAND.
Since the time-consuming cycles of serial access and re-loading cycles are removed, the system performance is improved. The ben-
efit is especially obvious when a portion of block is updated and the rest of the block also need to be copied to the newly assigned
free block.
Data from the source page is saved in one of the on-chip DataRAM buffers and then programmed directly into the destination page.
The DataRAM overwrites the previous data using the Buffer Sector Address (BSA) and Buffer Sector Count (BSC).
The Copy-Back Program Operation does this by performing sequential page-reads without a serial access and executing a
copy-program using the address of the destination page.
Copy-Back Program Operation Flow Chart
Start
Write ’DFS*, FBA’ of Flash
Add: F100h DQ=DFS*, FBA
Write ’FPA, FSA’ of Flash
Add: F107h DQ=FPA, FSA
Write ’FCBA’ of Flash
Add: F102h DQ=FCBA
Write ’FCPA, FCSA’ of Flash
Add: F103h DQ=FCPA, FCSA
Copy back completed
Write ’Copy-back Program’
command
Add: F220h DQ=001Bh
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Read Controller
Status Register
Add: F240h DQ[10]=Error
DQ[10]=0
Copy back Error
YES
NO
* DBS, DFS is for DDP
Note 1) Selected DataRAM by BSA & BSC is used for Copy back operation, so previous data is overwritten.
2) FBA, FPA and FSA should be input prior to FCBA, FCPA and FCSA.
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
*
Select DataRAM for DDP
Add: F101h DQ=DBS*
Write 0 to interrupt register
Add: F241h DQ=0000h
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=BSA, BSC
1)
3.9 Copy-Back Program Operation
相關(guān)PDF資料
PDF描述
KFM1G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFM2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DED5 MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFM2G16Q2M-DEB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
KFM2G16Q2M-DEB8000 制造商:Samsung Semiconductor 功能描述:2GB MUXED SLC X16 FBGA - Trays
KFM2G16Q2M-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
KFM2G16Q2M-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
KFM2GN6Q2B-HEB8T00 制造商:Samsung Semiconductor 功能描述:
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*