參數(shù)資料
型號： KFM1G16Q2M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MuxOneNAND FLASH MEMORY
中文描述： MuxOneNAND閃存
文件頁數(shù)： 87/124頁
文件大?。?/td> 1550K
代理商： KFM1G16Q2M
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
87
An OTP Program Operation accesses the OTP area and programs content from the DataRAM on-chip buffer to the designated
page(s) of the OTP.
A memory location in the OTP area can be programmed only one time (no erase operation permitted).
The OTP area is programmed using the same sequence as normal program operation after being accessed by the command (see
section 3.8 for more information).
Programming the OTP Area
Issue the OTP Access Command
Write data into the DataRAM (data can be input at anytime between the "Start" and "Write Program" commands
Issue a Flash Block Address (FBA) which is unlocked area address of NAND Flash Array address map.
Issue a Write Program command to program the data from the DataRAM into the OTP
When the OTP programming is complete, do a Cold-, Warm-, Hot-, NAND Flash Core Reset to exit the OTP Access mode.
3.11.2 OTP Program Operation
相關(guān)PDF資料
PDF描述
KFM1G16Q2M-DEB5 MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DEB5 MuxOneNAND FLASH MEMORY
KFM2G16Q2M-DEB5 MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFM1G16Q2M-DEB5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DEB6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DEB6000 制造商:Samsung Semiconductor 功能描述:1GB MUXED SLC X16 FBGA - Trays
KFM1G16Q2M-DED5 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
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