參數(shù)資料
型號(hào): KFM1G16Q2M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: MuxOneNAND FLASH MEMORY
中文描述: MuxOneNAND閃存
文件頁數(shù): 61/124頁
文件大?。?/td> 1550K
代理商: KFM1G16Q2M
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
61
This Read register shows the Error Correction result for the 4th selected sector of the main area data. ECCposWord3 is the error
position address in the Main Area data of 256 words. ECCposIO3 is the error position address which selects 1 of 16 DQs.
ECCposWord3 and ECCposIO3 are also updated at boot loading.
FF07h, default = 0000h
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved(0000)
ECCposWord3
ECCposIO3
2.8.34 ECC Result of 4
th
Selected Sector, Spare Area Data
Register FF08h (R)
This Read register shows the Error Correction result for the 4th selected sector of the spare area data. ECClogSector3 is the error
position address for 1.5 words of 2nd and 3rd words in the spare area. ECCposIO3 is the error position address which selects 1 of 16
DQs. ECClogSector3 and ECCposIO3 are also updated at boot loading.
FF08h, default = 0000h
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved(0000000000)
ECClogSector3
ECCposIO3
2.8.33 ECC Result of 4
th
Selected Sector, Main Area Data
Register FF07h (R)
ECC Log Sector
ECClogSector0~ECClogSector3 indicates the error position in the 2nd word and LSB of 3rd word in the spare area.
Refer to note 2 in chapter 2.7.2
ECClogSector Information [5:4]
ECClogSector
Error Position
00
2nd word
01
3rd word
10, 11
Reserved
相關(guān)PDF資料
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KFM1G16Q2M-DEB5 MuxOneNAND FLASH MEMORY
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