參數(shù)資料
型號： KFM1G16Q2M-DED5
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MuxOneNAND FLASH MEMORY
中文描述： MuxOneNAND閃存
文件頁數(shù)： 90/124頁
文件大小： 1550K
代理商： KFM1G16Q2M-DED5
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
90
OTP Lock Operation Flow Chart
Start
Write ’FPA, FSA’ of Flash
Add: F107h DQ=0000h
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=0001h
Write Data into DataRAM
2)
Add: 8th Word
in spare0/sector0/page0
Write Program command
DQ=0080h or 001Ah
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Add: F220h
Write 0 to interrupt register
Add: F241h DQ=0000h
Automatically
updated
DQ=XXXCh
Update Controller
Status Register
Add: F240h
DQ[6]=1(OTP
L
)
OTP lock completed
Write ’FBA’ of Flash
Add: F100h DQ=FBA
3)
Write ’OTP Access’ Command
Add: F220h DQ=0065h
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Write 0 to interrupt register
Add: F241h DQ=0000h
Do Cold reset
Write ’DFS’, ’FBA’ of Flash
1)
Add: F100h DQ=DFS, FBA
Select DataRAM for DDP
Add: F101h DQ=DBS*
* DBS, DFS is for DDP
2) Data input could be done anywhere between "Start" and "Write Program Command".
3) FBA should point the unlocked area address among NAND Flash Array address map.
Note 1) FBA(NAND Flash Block Address) could be omitted or any address.
相關PDF資料
PDF描述
KFM1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DED5 MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFM2G16Q2M-DED5 MuxOneNAND FLASH MEMORY
相關代理商/技術參數(shù)
參數(shù)描述
KFM1G16Q2M-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
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