參數(shù)資料
型號(hào)： KFM1G16Q2M-DED5
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MuxOneNAND FLASH MEMORY
中文描述： MuxOneNAND閃存
文件頁數(shù)： 89/124頁
文件大?。?/td> 1550K
代理商： KFM1G16Q2M-DED5
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
89
Even though the OTP area can only be programmed once without erase capability, it can be locked when the device starts up to pre-
vent any changes from being made.
Unlike the main area of the NAND Flash Array memory,
once the OTP block is locked, it cannot be unlocked.
Locking the OTP
Programming to the OTP area can be prevented by locking the OTP area. Locking the OTP area is accomplished by
programming XXXCh to 8th word of sector0 of page0 of the spare0 memory area.
At device power-up, this word location is checked and if XXXCh is found, the OTPL bit of the Controller Status Register is set to "1",
indicating the OTP is locked. When the Program Operation finds that the status of the OTP is locked, the device updates the Error Bit
of the Controller Status Register as "1" (fail).
OTP Lock Operation Steps
Issue the OTP Access Command
Fill data to be programmed into DataRAM (data can be input at anytime between the "Start" and "Write Program" commands)
Write 'XXXCH' data into the 8th word of sector0 of page0 of the spare0 memory area of the DataRAM.
Issue a Flash Block Address (FBA) which is unlocked area address of NAND Flash Array address map.
Issue a Program command to program the data from the DataRAM into the OTP
When the OTP lock is complete, do a Cold Reset to exit the OTP Access mode and update OTP lock bit[6].
OTP lock bit[6] of the Controller Status Register will be set to "1" and the OTP will be locked.
3.11.3 OTP Lock Operation
相關(guān)PDF資料
PDF描述
KFM1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DED5 MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFM2G16Q2M-DED5 MuxOneNAND FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFM1G16Q2M-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
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