參數(shù)資料
型號： KFM1G16Q2M-DED5
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MuxOneNAND FLASH MEMORY
中文描述： MuxOneNAND閃存
文件頁數(shù)： 82/124頁
文件大小： 1550K
代理商： KFM1G16Q2M-DED5
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
82
After a Multi-Block Erase Operation, verify Erase Operation result of each block with Multi-Block Erase Verify Command combined
with address of each block.
If a failed address is identified, it must be managed in firmware.
Multi Block Erase/ Multi Block Erase Verify Read Flow Chart
Start
Write ’DFS
1)
, FBA’ of Flash
Add: F100h DQ=DFS, FBA
Write ’Multi Block Erase’
Command
Add: F220h DQ=0095h
Wait for INT register
low to high transition
Add: F241h DQ=[15]=INT
Final Multi Block
Erase
YES
NO
Write 0 to interrupt register
Add: F241h DQ=0000h
Write ’FBA’ of Flash
Add: F100h DQ=FBA
Write ’Block Erase
Command’
Add: F220h DQ=0094h
Wait for INT register
low to high transition
Add: F241h DQ=[15]=INT
Write 0 to interrupt register
Add: F241h DQ=0000h
Multi Block Erase Verify Read
Write ’FBA’ of Flash
Add: F100h DQ=FBA
Write ’Multi Block Erase
Verify Read Command’
Add: F220h DQ=0071h
Wait for INT register
low to high transition
Add: F241h DQ=[15]=INT
Write 0 to interrupt register
Add: F241h DQ=0000h
Read Controller
Status Register
Add: F240h DQ[10]=Error
DQ[10]=0
Multi Block Erase completed
Final Multi Block
Erase Address
YES
NO
Erase completed
YES
Erase Error
NO
*DFS is for DDP
Note 1) DFS should be a fixed value, for Multi Block Erase is performed within a single chip.
3.10.3 Multi-Block Erase Verify Read Operation
相關PDF資料
PDF描述
KFM1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DED5 MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFM2G16Q2M-DED5 MuxOneNAND FLASH MEMORY
相關代理商/技術參數(shù)
參數(shù)描述
KFM1G16Q2M-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
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