參數(shù)資料
型號： KFM1G16Q2M-DED5
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MuxOneNAND FLASH MEMORY
中文描述： MuxOneNAND閃存
文件頁數(shù)： 45/124頁
文件大小： 1550K
代理商： KFM1G16Q2M-DED5
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
45
This Read/Write register describes the NAND Flash destination block address which will be copy back programmed.
F102h, default = 0000h
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved(000000)
FCBA
Device
Number of Block
FBA
1Gb
1024
FCBA[9:0]
Start Address3 Information
Register Information
Description
FCBA
NAND Flash Copy Back Block Address
2.8.12 Start Address4 Register F103h (R/W)
This Read/Write register describes the NAND Flash destination page address in a block and the NAND Flash destination sector
address in a page for copy back programming.
F103h, default = 0000h
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved(00000000)
FCPA
FCSA
Start Address4 Information
Item
Description
Default Value
Range
FCPA
NAND Flash Copy Back Page
Address
000000
000000 ~ 111111,
6 bits for 64 pages
FCSA
NAND Flash Copy Back Sector
Address
00
00 ~ 11,
2 bits for 4 sectors
2.8.11 Start Address3 Register F102h (R/W)
相關(guān)PDF資料
PDF描述
KFM1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DED5 MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFM2G16Q2M-DED5 MuxOneNAND FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFM1G16Q2M-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
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