參數(shù)資料
型號： KFM1G16Q2M-DED5
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MuxOneNAND FLASH MEMORY
中文描述： MuxOneNAND閃存
文件頁數(shù)： 33/124頁
文件大?。?/td> 1550K
代理商： KFM1G16Q2M-DED5
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
33
The figure below shows the assignment of the spare area in the Internal Memory NAND Array.
Spare Area Assignment in the Internal Memory NAND Array Information
Word
Byte
Note
Description
1
LSB
1
Invalid Block information in 1st and 2nd page of an invalid block
MSB
2
LSB
2
Managed by internal ECC logic for Logical Sector Number data
MSB
3
LSB
MSB
3
Reserved for future use
4
LSB
MSB
5
LSB
Dedicated to internal ECC logic. Read Only.
ECCm 1st for main area data
MSB
Dedicated to internal ECC logic. Read Only.
ECCm 2nd for main area data
6
LSB
Dedicated to internal ECC logic. Read Only.
ECCm 3rd for main area data
MSB
Dedicated to internal ECC logic. Read Only.
ECCs 1st for 2nd word of spare area data
7
LSB
Dedicated to internal ECC logic. Read Only.
ECCs 2nd for 3rd word of spare area data
MSB
3
Reserved for future use
8
LSB
4
Available to the user
MSB
Main area
256W
Main area
256W
Main area
256W
Main area
256W
Spare
area
8W
Spare
area
8W
Spare
area
8W
Spare
area
8W
{
1
st
W
ECCm
1st
ECCm
2nd
ECCm
3rd
ECCs
1st
ECCs
2nd
LSB
MSB
2
nd
W
3
rd
W
4
th
W
5
th
W
6
th
W
7
th
W
8
th
W
Note1 Note1 Note2 Note2 Note2 Note3 Note3 Note3
Note4 Note4
Note3
2.7.2 Internal Memory Spare Area Assignment
相關(guān)PDF資料
PDF描述
KFM1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DED5 MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFM2G16Q2M-DED5 MuxOneNAND FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFM1G16Q2M-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
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