參數(shù)資料
型號： KFM1G16Q2M-DED5
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MuxOneNAND FLASH MEMORY
中文描述： MuxOneNAND閃存
文件頁數(shù)： 116/124頁
文件大?。?/td> 1550K
代理商： KFM1G16Q2M-DED5
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
116
NOTE :
1. VA = Valid Address. When the Internal Routine operation is complete, the toggle bits will stop toggling.
2. Before IOBE is set to 1, RDY and INT pin are High-Z state.
t
CES
t
AAVDS
t
AAVDH
t
IAA
Hi-Z
CE
CLK
AVD
OE
A/DQ0:
A/DQ15
RDY
2)
VA
1)
≈
≈
≈
t
RDYS
Status Data
≈
≈
VA
≈
≈
≈
Status Data
≈
≈
t
ACH
t
ACS
t
AVDO
6.16 Toggle Bit Timing in Synchronous Read Mode
相關PDF資料
PDF描述
KFM1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DED5 MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFM2G16Q2M-DED5 MuxOneNAND FLASH MEMORY
相關代理商/技術參數(shù)
參數(shù)描述
KFM1G16Q2M-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
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