參數(shù)資料
型號(hào)： KFM1G16Q2M-DED5
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MuxOneNAND FLASH MEMORY
中文描述： MuxOneNAND閃存
文件頁數(shù)： 110/124頁
文件大?。?/td> 1550K
代理商： KFM1G16Q2M-DED5
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
110
NOTES:
1. AA = Address of address register
CA = Address of command register
ECD = Erase Command
EMA = Address of memory to be erased
SA = Address of status register
2. “In progress” and “complete” refer to status register
3. Status reads in this figure is asynchronous read, but status read in synchronous mode is also supported.
6.8 Block Erase Operation Timing
See AC Characteristics Tables 5.7 and 5.8
Program Command Sequence (last two cycles)
WE
CE
CLK
t
DS
t
DH
t
CH
t
WPL
t
CS
t
WPH
t
WC
SA
SA
ProIn
Completed
AA
OE
Read Status Data
V
IL
≈
≈
≈
≈
AVD
BA
CA
PCD
PMA
BD
t
AAVDH
t
AAVDS
t
PGM
INT
bit
t
AVDP
t
WEA
t
CER
A/DQ0:
A/DQ15
RDY
Hi-Z
t
CER
t
CEZ
t
CEZ
相關(guān)PDF資料
PDF描述
KFM1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DED5 MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFM2G16Q2M-DED5 MuxOneNAND FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFM1G16Q2M-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
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