參數(shù)資料
型號： KFM1G16Q2M-DED5
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MuxOneNAND FLASH MEMORY
中文描述： MuxOneNAND閃存
文件頁數(shù)： 106/124頁
文件大小： 1550K
代理商： KFM1G16Q2M-DED5
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
106
6.4 Asynchronous Read
(VA Transition After AVD Low)
See AC Characteristics Table 5.5
6.3 Asynchronous Read
(VA Transition Before AVD Low)
See AC Characteristics Table 5.5
t
OE
VA
Valid RD
t
CE
t
OEH
t
OEZ
t
AAVDH
t
AVDP
t
AA
t
AAVDS
CE
OE
WE
A/DQ0:
A/DQ15
AVD
Hi-Z
Hi-Z
RDY
t
RC
t
WEA
t
CA
t
CEZ
t
CER
t
AVDO
Hi-Z
NOTE:
VA=Valid Read Address, RD=Read Data.
See timing diagram 6.14, 6.15 for tASO
t
OE
VA
Valid RD
t
OEH
t
OEZ
t
ACC
t
AAVDH
t
AVDP
t
AAVDS
CE
OE
WE
A/DQ0:
A/DQ15
AVD
t
WEA
t
CEZ
t
CA
t
CER
t
AVDO
Hi-Z
Hi-Z
RDY
t
RC
t
CE
Hi-Z
NOTE:
VA=Valid Read Address, RD=Read Data.
See timing diagram 6.14, 6.15 for tASO
相關(guān)PDF資料
PDF描述
KFM1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DED5 MuxOneNAND FLASH MEMORY
KFN1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFM2G16Q2M-DED5 MuxOneNAND FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KFM1G16Q2M-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
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