參數(shù)資料
型號: KFM1G16Q2M-DEB6
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: MuxOneNAND FLASH MEMORY
中文描述: MuxOneNAND閃存
文件頁數(shù): 99/124頁
文件大小: 1550K
代理商: KFM1G16Q2M-DEB6
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
99
4.1 Absolute Maximum Ratings
NOTES
:
1. Minimum DC voltage is -0.5V on Input/ Output pins. During transitions, this level should not fall to POR level(typ. 1.5V) .
Maximum DC voltage is Vcc+0.6V on input / output pins which, during transitions, may overshoot to Vcc+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
Vcc
Vcc
-0.5 to + 2.45
V
All Pins
V
IN
-0.5 to + 2.45
Temperature Under Bias
Extended
T
bias
-30 to +125
°
C
Industrial
-40 to +125
Storage Temperature
T
stg
-65 to +150
°
C
Short Circuit Output Current
I
OS
5
mA
Recommended Operating Temperature
T
A
(Extended Temp.)
-30 to +85
°
C
T
A
(Industrial Temp.)
-40 to +85
4.2 Operating Conditions
Voltage reference to GND
NOTES
:
1. The system power should reach 1.7V after POR triggering level(typ. 1.5V) within 400us.
2. Vcc-Core (or Vcc) should reach the operating voltage level prior to or at the same time as Vcc-IO (or Vccq).
Parameter
Symbol
KFM1G16Q2M
Unit
Min
Typ.
Max
Supply Voltage
V
CC-
core / Vcc
1.7
1.8
1.95
V
V
CC-
IO / Vccq
V
SS
0
0
0
V
4.0 DC CHARACTERISTICS
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KFN1G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
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