參數(shù)資料
型號： KFM1G16Q2M-DEB6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MuxOneNAND FLASH MEMORY
中文描述： MuxOneNAND閃存
文件頁數(shù)： 64/124頁
文件大?。?/td> 1550K
代理商： KFM1G16Q2M-DEB6
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
64
The device bus operations are shown in the table below.
Note : L=V
IL
(Low), H=V
IH
(High), X=Don’t Care.
Operation
CE
OE
WE
ADQ0~15
RP
CLK
AVD
Standby
H
X
X
High-Z
H
X
X
Warm Reset
X
X
X
High-Z
L
X
X
Asynchronous Write
L
H
L
Add. In /
Data In
H
L
Asynchronous Read
L
L
H
Add. In /
Data Out
H
L
Load Initial Burst Address
L
H
H
Add. In
H
Burst Read
L
L
H
Burst Data
Out
H
Terminate Burst Read
Cycle
H
X
H
High-Z
H
X
X
Terminate Burst Read
Cycle via RP
X
X
X
High-Z
L
X
X
Terminate Current Burst
Read Cycle and Start
New Burst Read Cycle
H
H
Add In
H
H
3.2 Device Bus Operation
相關(guān)PDF資料
PDF描述
KFN1G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFM2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DED5 MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
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KFM1G16Q2M-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
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