參數(shù)資料
型號(hào)： KFM1G16Q2M-DEB6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MuxOneNAND FLASH MEMORY
中文描述： MuxOneNAND閃存
文件頁數(shù)： 57/124頁
文件大小： 1550K
代理商： KFM1G16Q2M-DEB6
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
57
This Read/Write register shows the NAND Flash block address in the Write Protection mode. Setting this register precedes a 'Lock
Block' command, 'Unlock Block' command, or ’Lock-Tight' Command.
F24Ch, default = 0000h
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Reserved(0000000)
SBA
Device
Number of Block
SBA
1Gb
1024
[9:0]
SBA Information[9:0]
Item
Definition
Description
SBA
Start Block Address
Precedes Lock Block, Unlock Block, or Lock-Tight commands
2.8.23 Start Block Address Register F24Ch (R/W)
Erase Interrupt (EI)
This is the Erase interrupt bit.
EI Interrupt [5]
Status
Conditions
Default State
Valid
State
Interrupt
Function
Cold
Warm/hot
0
0
0
off
sets itself to ’1’
At the completion of an Erase Operation
(0094h, 0095h, 0030h)
0
→
1
Pending
clears to ’0’
’0’ is written to this bit, or
Cold/Warm/Hot reset is being performed
1
→
0
off
Reset Interrupt (RSTI)
This is the Reset interrupt bit.
RSTI Interrupt [4]
Status
Conditions
Default State
Valid
State
interrupt
Function
Cold
Warm/hot
0
1
0
off
sets itself to ’1’
At the completion of an Reset Operation
(00B0h, 00F0h, 00F3h or
warm reset is released)
0
→
1
Pending
clears to ’0’
’0’ is written to this bit
1
→
0
off
相關(guān)PDF資料
PDF描述
KFN1G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFM2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DED5 MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
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