參數(shù)資料
型號(hào)： KFM1G16Q2M-DEB6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MuxOneNAND FLASH MEMORY
中文描述： MuxOneNAND閃存
文件頁數(shù)： 111/124頁
文件大?。?/td> 1550K
代理商： KFM1G16Q2M-DEB6
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
111
Note: 1) Bootcode copy operation starts 400us later than POR activation.
The system power should reach Vcc after POR triggering level(typ. 1.5V) within 400us for valid boot code data.
2) 1K bytes Bootcode copy takes 70us(estimated) from sector0 and sector1/page0/block0 of NAND Flash array to BootRAM.
Host can read Bootcode in BootRAM(1K bytes) after Bootcode copy completion.
3) INT register goes ‘Low’ to ‘High’ on the condition of ‘Bootcode-copy done’ and RP rising edge.
If RP goes ‘Low’ to ‘High’ before ‘Bootcode-copy done’, INT register goes to ‘Low’ to ‘High’ as soon as ‘Bootcode-copy done’
System Power
Sleep
Bootcode copy
Idle
Bootcode - copy done
POR triggering level
3)
2)
RP
INT
MuxOneNAND
Operation
0 (default)
1
IOBE bit
1 (default)
INTpol bit
High-Z
1)
INT bit
0 (default)
1
6.9 Cold Reset Timing
相關(guān)PDF資料
PDF描述
KFN1G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFM2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DED5 MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
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