參數(shù)資料
型號(hào)： KFM1G16Q2M-DEB6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： MuxOneNAND FLASH MEMORY
中文描述： MuxOneNAND閃存
文件頁數(shù)： 105/124頁
文件大?。?/td> 1550K
代理商： KFM1G16Q2M-DEB6
MuxOneNAND1G(KFM1G16Q2M-DEB5)
MuxOneNAND2G(KFN2G16Q2M-DEB5)
FLASH MEMORY
105
6.1 8-Word Linear Burst Mode with Wrap Around
See AC Characteristics Table 5.4
6.2 Continuous Linear Burst Mode with Wrap Around
See AC Characteristics Table 5.4
6 cycles for second access shown.
BRL = 4
t
CES
t
AVDS
t
AVDH
t
ACS
t
ACH
t
IAA
t
OE
t
RDYO
t
BA
t
BDH
t
CLK
Hi-Z
CE
CLK
AVD
OE
RDY
≈
≈
≈
≈
t
RDYS
t
RDYA
A/DQ0:
A/DQ15
t
CER
t
AVDO
t
CEZ
t
OEZ
D6
D7
D0
D1
D2
D3
D7
D0
t
CLKH
t
CLKL
Hi-Z
6 cycles for second access shown.
BRL = 4
t
CES
t
AVDS
t
AVDH
t
ACS
t
ACH
t
IAA
t
BA
t
BDH
t
CLK
Hi-Z
CE
t
CER
CLK
AVD
OE
RDY
≈
≈
≈
t
RDYS
t
RDYA
t
OE
≈
A/DQ0:
A/DQ15
t
CEZ
t
OEZ
Da+1
Da+2
Da+3
Da+4
Da+5
Da+n Da+n+1
t
AVDO
Hi-Z
t
RDYO
D6
6.0 TIMING DIAGRAMS
相關(guān)PDF資料
PDF描述
KFN1G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFM2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DED5 MuxOneNAND FLASH MEMORY
KFM1G16Q2M-DED6 MuxOneNAND FLASH MEMORY
KFN2G16Q2M-DEB6 MuxOneNAND FLASH MEMORY
相關(guān)代理商/技術(shù)參數(shù)
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KFM1G16Q2M-DED6 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MuxOneNAND FLASH MEMORY
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