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參數(shù)資料
| 型號： | KFM1216Q2M |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | FLASH MEMORY |
| 中文描述： | 閃存 |
| 文件頁數(shù)： | 6/88頁 |
| 文件大?。?/td> | 1150K |
| 代理商： | KFM1216Q2M |
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MuxOneNAND512(KFM1216Q2M)
FLASH MEMORY
6
Document Title
MuxOneNAND
0. Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Revision No.
0.0
0.1
0.2
1.0
Remark
Preliminary
Final
Draft Date
Jan. 28, 2004
Feb. 4, 2004
July. 2, 2004
Aug. 5, 2004
History
Initial issue.
1. Excluded Cache Program Operation
2. Added the descriptions for below operations
-. Reset
-. Write Protection
-. Burst Read Latency
-. Dual Operation
-. Invalid block definition and Identification method
-. Error in write or read operation
-. ECC
3. Revised program sequence
1. Added Table of Contents
2. Corrected the errata
3. Added Data Protection Scheme during Power-down
4. ECC description is revised.
5. Revised Read while Load and Write While Program diagram.
6. Added OTP description
7. Revised OTP Flow Chart
8. Added Spare Assignment information
9. Added NAND Array Memory Map
10. Added DC/AC parameters
11. Added the Addressing for program operation
12. Added INT guidance
13. Added Write While Load and Read While Program Chapter
14. Revised tRD1 typical value from 35ns to 38ns
15. Revised tRD2 typical value from 75ns to 85ns
1. Corrected the errata
2. Deleted BootRAM unlock operation
3. Revised Write Protect Status description
4. Revised OTP access command as 2 cycle
5. Revised dual operation diagram
6. Revised power-down voltage detector level
7. Revised tRD1 typical value from 38ns to 35ns
8. Revised tRD2 typical value from 85ns to 75ns
9. Deleted tOEH in asynchronous read operation
10. Revised Write Protection status description
11. Added INT bit status in Cold Reset operation
12. Moved Interrupt register setting before inputting command in all flow
charts
13. Revised Dual operation diagrams
14. Added the tREADY parameter in Hot Reset operation
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