參數(shù)資料
型號(hào): KFM1216Q2M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY
中文描述: 閃存
文件頁(yè)數(shù): 4/88頁(yè)
文件大小: 1150K
代理商: KFM1216Q2M
MuxOneNAND512(KFM1216Q2M)
FLASH MEMORY
4
8.
8.1
8.1.1
8.1.2
8.1.3
8.1.4
8.1.5
8.2
8.3
8.3.1
8.3.2
8.3.3
8.3.4
8.4
8.4.1
8.4.2
8.5
8.6
8.6.1
8.6.2
8.6.3
8.6.4
8.6.5
8.6.6
8.6.7
8.7
8.7.1
8.8
8.8.1
8.9
8.10
8.10.1
8.10.2
8.11
8.12
8.13
8.14
8.14.1
8.15
8.16
TABLE OF CONTENTS, continued
Device Operation
Command based operation
Read Data from Buffer
Write Data to Buffer
Reset MuxOneNAND
Load Data into Buffer
Read Identification Data
Device Bus Operations
Reset Mode
Cold Reset
Warm Reset
Hot Reset
NAND Flash Core Reset
Write Protection
Write Protection for BootRAM
Write Protection for NAND Flash array
Load Operation
Read Operation
Asynchronous Read Mode (RM = 0)
Synchronous (Burst) Read Mode (RM = 1)
Continuous Linear Burst Read
4-, 8-,16-, 32- Word Linear Burst Read
Programmable Burst Read Latency
Handshaking
Output Disable Mode
Program Operation
Addressing for Program Operation
Copy-back Program Operation
Copy-Back Program Operation with Random Data Input
Erase Operation
OTP Operation
OTP Load(OTP Access+Load NAND)
OTP Programming(OTP Access+Program NAND)
Read While Load
Write While Program
Write While Load and Read While Program
ECC Operation
ECCBypass Operation
Data Protection during Power Down
Technical Notes
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