參數(shù)資料
型號(hào): KFM1216Q2M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY
中文描述: 閃存
文件頁(yè)數(shù): 3/88頁(yè)
文件大?。?/td> 1150K
代理商: KFM1216Q2M
MuxOneNAND512(KFM1216Q2M)
FLASH MEMORY
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TABLE OF CONTENTS
Revision History
Features
General Description
Pin Description
Pin Configuration
Block Diagram
Memory Address Map
Address Map For MuxOneNAND External Memory
Address Map For MuxOneNAND NAND Array (Word Order)
Detailed Information Of Address Map (Word Order)
Spare area assignment
Detailed address map for registers
Manufacturer ID Register (R): F000h
Device ID Register (R): F001h
Version ID Register (R): F002h
Data Buffer size Register(R): F003h
Boot Buffer size Register (R): F004h
Amount of Buffers Register (R): F005h
Technology Register (R): F006h
Start Address1 Register (R/W): F100h
Start Address2 Register (R/W): F101h
Start Address3 Register (R/W): F102h
Start Address4 Register (R/W): F103h
Start Address5 Register: F104h
Start Address6 Register: F105h
Start Address7 Register: F106h
Start Address8 Register (R/W): F107h
Start Buffer Register (R/W): F200h
Command Register (R/W): F220h
System Configuration 1 Register (R, R/W): F221h
System Configuration 2 Register : F222h
Controller Status Register (R): F240h
Interrupt Status Register (R/W): F241h
Start Block Address (R/W): F24Ch
End Block Address (R/W): F24Dh
NAND Flash Write Protection Status (R): F24Eh
ECC Status Register(R): FF00h
ECC Result of first selected Sector Main area data Register (R): FF01h
ECC Result of first selected Sector Spare area data Register (R): FF02h
ECC Result of second selected Sector Main area data Register (R): FF03h
ECC Result of second selected Sector Spare area data Register (R): FF04h
ECC Result of third selected Sector Main area data Register (R): FF05h
ECC Result of third selected Sector Spare area data Register (R): FF06h
ECC Result of fourth selected Sector Main area data Register (R): FF07h
ECC Result of fourth selected Sector Spare area data Register (R): FF08h
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