參數(shù)資料
型號： KFG5616U1M-DIB
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： OneNAND256
中文描述： OneNAND256
文件頁數(shù)： 4/93頁
文件大小： 1223K
代理商： KFG5616U1M-DIB
OneNAND256
FLASH MEMORY
4
Document Title
OneNAND
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Revision No.
1.2
Remark
Draft Date
Jun. 15, 2005
History
1. Added Copyright Notice in the beginning
2. Corrected Errata
3. Updated Icc2, Icc4, Icc5, Icc6 and I
SB
4. Revised INT pin description
5. Added OTP erase case NOTE
6. Revised case definitions of Interrupt Status Register
7. Added a NOTE to Command register
8. Added ECClogSector Information table
9. Removed ’data unit based data handling’ from description of Device
Operation
10. Revised description on Warm/Hot/NAND Flash Core Reset
11. Revised Warm Reset Timing
12. Added note for OTP
L
in Internal Register Reset
13. Removed all block lock default case after cold or warm reset
14. Added explanation for each prohibited case in protect mode
15. Revised the case of writing other commands during Multi Block Erase
routine
16. Revised description for 4-, 8-, 16-, 32-Word Linear Burst Mode
17. Revised OTP operation description
18. Added supplemental explanation for ECC Operation
19. Removed classification of ECC error from ECC Operation
20. Removed redundant sentance from ECC Bypass Operation
21. Added technical note for Boot Sequence
22. Added technical note for INT pin connection guide
23. Excluded tOEH from Asynchronous Read Table
24. Revised Asycnchronous Read timing diagram for CE don’t care mode
25. Revised Asynchronous Write timing diagram for CE don’t care mode
26. Revised Load operation timing diagram for CE don’t care mode
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