參數(shù)資料
型號： KFG5616Q1M-DEB
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： OneNAND256
中文描述： OneNAND256
文件頁數(shù)： 57/93頁
文件大小： 1223K
代理商： KFG5616Q1M-DEB
OneNAND256
FLASH MEMORY
57
8.10 OTP Operation
The device supports one block sized OTP area, which can be read, programmed and locked with the same sequence as normal
operation. But this OTP block could not be erased. This block is separated from NAND Flash Array, so it could be accessed by OTP
Access command instead of FBA. If user wants to exit from OTP access mode, Cold, Warm and Hot Reset operation should be done.
But if OTP access mode exit happens with Reset operation during Erase Suspend mode, Reset operation could hurt the erase oper-
ation. So if user wants to exit from OTP access mode without the erase operation stop, ’Reset NAND Flash Core’ command should
be used.
OTP area is one block size(64KB, 64pages) and is divided by two areas. The first area from page 0 to page 19, total 20pages, is
assigned for user and the second area from page 20 to page 63, total 44pages, are occupied for the device manufacturer. The sec-
ond area is programmed prior to shipping, so this area could not be used by user.
This block is fully guaranteed to be a valid block.
OTP Block Page Allocation Information
Area
Page
Use
User
0 ~ 19 (20 pages)
Designated as user area
Manufacturer
20 ~ 63 (44 pages)
Used by the device manufacturer
Page:1KB+32B
Sector(main area):512B
Sector(spare area):16B
Figure 20. OTP area structure and assignment
One Block:
64pages
64KB+2KB
Manufacturer Area :
20pages
page 20 to page 63
User Area :
20pages
page 0 to page 19
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