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參數(shù)資料
| 型號(hào)： | K6F1008V2C-F |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM |
| 中文描述： | 128Kx8位超低功耗和低電壓的CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大?。?/td> | 126K |
| 代理商： | K6F1008V2C-F |
CMOS SRAM
K6F1008V2C Family
Revision 1.0
June 2002
2
128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM
GENERAL DESCRIPTION
The K6F1008V2C families are fabricated by SAMSUNG
′
s
advanced full CMOS process technology. The families support
industrial temperature range and have various package types
for user flexibility of system design. The families also support
low data retention voltage for battery back-up operation with low
data retention current.
FEATURES
Process Technology: Full CMOS
Organization: 128K x8 bit
Power Supply Voltage: 3.0~3.6V
Low Data Retention Voltage: 1.5V(Min)
Three State Outputs
Package Type: 32-TSOP1-0813.4F
FUNCTIONAL BLOCK DIAGRAM
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
Precharge circuit.
Memory array
1024 rows
128
×
8 columns
I/O Circuit
Column select
Clk gen.
Row
select
I/O
1
Data
cont
Data
cont
I/O
8
CS
1
WE
OE
CS
2
Control
logic
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
2. Typical values are measured at V
CC
=3.3V, T
A
=25
°
C and not 100% tested.
Product Family
Operating Temperature
Vcc Range
Speed
Power Dissipation
PKG Type
Standby
(I
SB1
, Typ.)
Operating
(I
CC1
, Max)
K6F1008V2C-F
Industrial(-40~85
°
C)
3.0~3.6V
55
1)
/70ns
0.5
μ
A
2)
3mA
32-TSOP1-0813.4F
PIN DESCRIPTION
Name
Function
Name
Function
CS
1
, CS
2
Chip Select Inputs
I/O
1
~I/O
8
Data Inputs/Outputs
OE
Output Enable Input
Vcc
Power
WE
Write Enable Input
Vss
Ground
A
0
~A
16
Address Inputs
NC
No Connection
A11
A9
A8
A13
WE
CS2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
32-sTSOP
Type1-Forward
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K6F1008V2C-YF55 | 制造商:Samsung Semiconductor 功能描述: |
| K6F1008V2C-YF55000 | 制造商:Samsung Semiconductor 功能描述:SRAM Chip Async Single 3.3V 1M-Bit 128K x 8 55ns 32-Pin TSOP-I Tube |
| K6F1008V2C-YF70 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM |
| K6F1016U4B | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1016U4B-F | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
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