參數(shù)資料
型號(hào): K4S641632E-TC55
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 64Mbit SDRAM
中文描述: 64Mbit SDRAM的
文件頁(yè)數(shù): 7/10頁(yè)
文件大?。?/td> 129K
代理商: K4S641632E-TC55
K4S641632E
CMOS SDRAM
Rev.0.2 Sept. 2001
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Notes :
DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Notes
Output rise time
trh
Measure in linear
region : 1.2V ~ 1.8V
1.37
4.37
Volts/ns
3
Output fall time
tfh
Measure in linear
region : 1.2V ~ 1.8V
1.30
3.8
Volts/ns
3
Output rise time
trh
Measure in linear
region : 1.2V ~ 1.8V
2.8
3.9
5.6
Volts/ns
1,2
Output fall time
tfh
Measure in linear
region : 1.2V ~ 1.8V
2.0
2.9
5.0
Volts/ns
1,2
1. Rise time specification based on 0pF + 50
to V
SS
, use these values to design to.
2. Fall time specification based on 0pF + 50
to V
DD
, use these values to design to.
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to V
SS
.
Notes :
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
Parameter
Symbol
- 50
- 55
- 60
- 70
- 75
- 1H
- 1L
Unit Note
Min Max Min Max Min Max Min Max Min Max Min Max Min Max
CLK cycle
time
CAS latency=3
t
CC
5
1000
5.5
1000
6
1000
7
1000
7.5
1000
10
1000
10
1000
ns
1
CAS latency=2
-
-
-
-
10
10
12
CLK to valid
output delay
CAS latency=3
t
SAC
-
4.5
-
5
5
6
5.4
6
6
ns
1,2
CAS latency=2
-
-
-
-
-
-
6
6
7
Output data
hold time
CAS latency=3
t
OH
2
2
2.5
3
3
3
3
ns
2
CAS latency=2
-
-
-
-
3
3
3
CLK high pulse width
t
CH
2
2
2.5
3
2.5
3
3
ns
3
CLK low pulse width
t
CL
2
2
2.5
3
2.5
3
3
ns
3
Input setup time
t
SS
1.5
1.5
1.5
2
1.5
2
2
ns
3
Input hold time
t
SH
1
1
1
1
0.8
1
1
ns
3
CLK to output in Low-Z
t
SLZ
1
1
1
1
1
1
1
ns
2
CLK to output
in Hi-Z
CAS latency=3
t
SHZ
4.5
5
5
6
5.4
6
6
ns
CAS latency=2
-
-
-
-
6
6
7
相關(guān)PDF資料
PDF描述
K4S641632E-TC60 64Mbit SDRAM
K4S641632E-TC70 64Mbit SDRAM
K4S641632E-TC75 64Mbit SDRAM
K4S641632E-TL1H 64Mbit SDRAM
K4S641632E-TL1L 64Mbit SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4S641632ETC60 制造商:SAMSUNG 功能描述:*
K4S641632E-TC60 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Mbit SDRAM
K4S641632E-TC70 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Mbit SDRAM
K4S641632E-TC75 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Mbit SDRAM
K4S641632E-TL1H 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:64Mbit SDRAM