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參數(shù)資料
| 型號： | K4S640432D |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| 中文描述： | 64Mbit SDRAM的4米× 4位× 4銀行同步DRAM LVTTL |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 128K |
| 代理商： | K4S640432D |
K4S640432D
CMOS SDRAM
Rev. 0.0 Jun. 1999
The K4S640432D is 67,108,864 bits synchronous high data
rate Dynamic RAM organized as 4 x 4,194,304 words by 4 bits,
fabricated with SAMSUNG
′
s high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock I/O transactions are possible on every clock
cycle. Range of operating frequencies, programmable burst
length and programmable latencies allow the same device to be
useful for a variety of high bandwidth, high performance mem-
ory system applications.
ORDERING INFORMATION
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the system
clock
Burst read single-bit write operation
DQM for masking
Auto & self refresh
64ms refresh period (4K cycle)
GENERAL DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
4M x 4Bit x 4 Banks Synchronous DRAM
Part No.
Max Freq.
133MHz(CL=3)
125MHz(CL=3)
100MHz(CL=2)
100MHz(CL=3)
Interface Package
K4S640432D-TC/L75
K4S640432D-TC/L80
K4S640432D-TC/L1H
K4S640432D-TC/L1L
K4S640432D-TC/L10 66MHz(CL=2 &3)
LVTTL
54
TSOP(II)
Bank Select
Data Input Register
4M x 4
4M x 4
S
O
I
Column Decoder
Latency & Burst Length
Programming Register
A
R
R
R
C
L
L
LCKE
LRAS
LCBR
LWE
LDQM
CLK
CKE
CS
RAS
CAS
WE
DQM
LWE
LDQM
DQi
CLK
ADD
LCAS
LWCBR
4M x 4
4M x 4
Timing Register
Samsung Electronics reserves the right to change products or specification without notice.
*
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S640432E | 4M x 4Bit x 4 Banks Synchronous DRAM |
| K4S640432E-L1H | 4M x 4Bit x 4 Banks Synchronous DRAM |
| K4S640432E-L1L | 4M x 4Bit x 4 Banks Synchronous DRAM |
| K4S640432E-L75 | 4M x 4Bit x 4 Banks Synchronous DRAM |
| K4S640432E-TC | 4M x 4Bit x 4 Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S640432D-TC/L10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S640432D-TC/L1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S640432D-TC/L1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S640432D-TC/L75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| K4S640432D-TC/L80 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
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