- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374280 > K4S511633F-L (SAMSUNG SEMICONDUCTOR CO. LTD.) 8M x 16Bit x 4 Banks Mobile SDRAM PDF資料下載
參數(shù)資料
| 型號： | K4S511633F-L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 8M x 16Bit x 4 Banks Mobile SDRAM |
| 中文描述： | 8米× 16 × 4銀行移動SDRAM |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 114K |
| 代理商： | K4S511633F-L |
K4S511633F-Y(P)C/L/F
September 2004
4
Mobile-SDRAM
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25 to 70
°
C)
ABSOLUTE MAXIMUM RATINGS
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Parameter
Symbol
Value
Unit
Voltage on any pin relative to V
ss
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
supply relative to V
ss
V
DD
, V
DDQ
-1.0 ~ 4.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
1.0
W
Short circuit current
I
OS
50
mA
NOTES :
1. VIH (max) = 5.3V AC.The overshoot voltage duration is
≤
3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
VIN
≤
VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
4. Dout is disabled, 0V
≤
VOUT
≤
VDDQ.
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
2.7
3.0
3.6
V
V
DDQ
2.7
3.0
3.6
V
Input logic high voltage
V
IH
2.2
3.0
V
DDQ
+ 0.3
V
1
Input logic low voltage
V
IL
-0.3
0
0.5
V
2
Output logic high voltage
V
OH
2.4
-
-
V
I
OH
= -2mA
Output logic low voltage
V
OL
-
-
0.4
V
I
OL
= 2mA
Input leakage current
I
LI
-2
-
2
uA
3
CAPACITANCE
(V
DD
= 1.8V, T
A
= 23
°
C, f = 1MHz, V
REF
=0.9V
±
50 mV)
Pin
Symbol
Min
Max
Unit
Note
Clock
C
CLK
3.0
6.0
pF
RAS, CAS, WE, CS, CKE
C
IN
3.0
6.0
pF
DQM
C
IN
1.5
3.0
pF
Address
C
ADD
3.0
6.0
pF
DQ
0
~ DQ
15
C
OUT
3.0
5.0
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S511633F-YC | 8M x 16Bit x 4 Banks Mobile SDRAM |
| K4S511633F-YPC | 8M x 16Bit x 4 Banks Mobile SDRAM |
| K4S511633F | 8M x 16Bit x 4 Banks Mobile SDRAM |
| K4S513233F-F1H | Mobile SDRAM |
| K4S513233F-F1L | Mobile SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S511633FPL75 | 制造商:Samsung Semiconductor 功能描述: |
| K4S511633F-YC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 16Bit x 4 Banks Mobile SDRAM |
| K4S511633F-YL75000 | 制造商:Samsung 功能描述:512 SDRAM X16 FBGA - Trays |
| K4S511633F-YPC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 16Bit x 4 Banks Mobile SDRAM |
| K4S51163LF-Y(P)C/L/F1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。