參數(shù)資料
型號(hào)： K4S51153PF
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
中文描述： 8米× 16 × 4銀行在54FBGA移動(dòng)SDRAM
文件頁(yè)數(shù)： 4/12頁(yè)
文件大小： 108K
代理商： K4S51153PF
K4S51153PF - Y(P)F
September 2004
4
Mobile SDRAM
ABSOLUTE MAXIMUM RATINGS
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Parameter
Symbol
Value
Unit
Voltage on any pin relative to V
ss
V
IN
, V
OUT
-1.0 ~ 2.6
V
Voltage on V
DD
supply relative to V
ss
V
DD
, V
DDQ
-1.0 ~ 2.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
1.0
W
Short circuit current
I
OS
50
mA
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= -25 to 70
°
C for Commercial)
NOTES :
1. VIH (max) = 2.2V AC.The overshoot voltage duration is
≤
3ns.
2. VIL (min) = -1.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
VIN
≤
VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs.
4. Dout is disabled, 0V
≤
VOUT
≤
VDDQ.
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
1.7
1.8
1.95
V
V
DDQ
1.7
1.8
1.95
V
Input logic high voltage
V
IH
0.8 x V
DDQ
1.8
V
DDQ
+ 0.3
V
1
Input logic low voltage
V
IL
-0.3
0
0.3
V
2
Output logic high voltage
V
OH
V
DDQ
-0.2
-
-
V
I
OH
= -0.1mA
Output logic low voltage
V
OL
-
-
0.2
V
I
OL
= 0.1mA
Input leakage current
I
LI
-2
-
2
uA
3
CAPACITANCE
(V
DD
= 2.5V, T
A
= 23
°
C, f = 1MHz, V
REF
=0.9V
±
50 mV)
Pin
Symbol
Min
Max
Unit
Note
Clock
C
CLK
3.0
6.0
pF
RAS, CAS, WE, CKE
C
IN
3.0
6.0
pF
CS
C
IN
1.5
3.0
pF
DQM
C
IN
3.0
6.0
pF
Address
C
ADD
3.0
6.0
pF
DQ
0
~ DQ
15
C
OUT
6.0
10.0
pF
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