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參數(shù)資料
| 型號： | K4S510732B-TL1L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Stacked 512Mbit SDRAM |
| 中文描述： | 堆積512兆內存 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 116K |
| 代理商： | K4S510732B-TL1L |
K4S510732B
CMOS SDRAM
Rev. 0.0 Feb.2001
Preliminary
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
Version
Unit
Note
-75
-1H
-1L
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
135
125
125
mA
1
Precharge standby current in
power-down mode
I
CC2
P
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
4
mA
I
CC2
PS
4
Precharge standby current in
non power-down mode
I
CC2
N
30
mA
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
25
Active Standby current
in power-down mode
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
8
mA
I
CC3
PS
8
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
45
mA
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
40
mA
Operating current
(Burst mode)
I
CC4
I
O
= 0 mA
Page burst
4banks activated.
t
CCD
= 2CLKs
170
145
145
mA
1
Refresh current
I
CC5
t
RC
≥
t
RC
(min)
235
225
225
mA
2
Self refresh current
I
CC6
CKE
≤
0.2V
C
6
mA
3
L
4
mA
4
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S510732B-TC**
4. K4S510732B-TL**
5. Unless otherwise noticed, input swing level is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ
).
Notes :
相關PDF資料 |
PDF描述 |
|---|---|
| K4S510732B-TL75 | Stacked 512Mbit SDRAM |
| K4S510832M | 16M x 8bit x 4 Banks Synchronous DRAM LVTTL |
| K4S510832M-TL75 | 16M x 8bit x 4 Banks Synchronous DRAM LVTTL |
| K4S510832M-TC1H | 16M x 8bit x 4 Banks Synchronous DRAM LVTTL |
| K4S510832M-TC75 | 16M x 8bit x 4 Banks Synchronous DRAM LVTTL |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4S510732B-TL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 512Mbit SDRAM |
| K4S510832B-CL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb B-die SDRAM Specification |
| K4S510832B-TC75 | 制造商:Samsung Semiconductor 功能描述: |
| K4S510832B-TCL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb B-die SDRAM Specification |
| K4S510832B-UC75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb B-die SDRAM Specification |
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