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參數(shù)資料
| 型號： | K4S510732B-TL1L |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Stacked 512Mbit SDRAM |
| 中文描述： | 堆積512兆內(nèi)存 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 116K |
| 代理商： | K4S510732B-TL1L |
K4S510732B
CMOS SDRAM
Rev. 0.0 Feb.2001
Preliminary
The K4S510732B is 536,870,912 bits synchronous high data rate
Dynamic RAM organized as 4 x 16,777,216 words by 8 bits, fabri-
cated with SAMSUNG's high performance CMOS technology. Syn-
chronous design allows precise cycle control with the use of
system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and
programmable latencies allow the same device to be useful for a
variety of high bandwidth, high performance memory system appli-
cations.
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the system
clock.
Burst read single-bit write operation
DQM for masking
Auto & self refresh
64ms refresh period (8K Cycle)
GENERAL DESCRIPTION
FEATURES
FUNCTIONAL BLOCK DIAGRAM
16M x 8Bit x 4 Banks Synchronous DRAM
ORDERING INFORMATION
Part No.
Max Freq.
133MHz(CL=3)
100MHz(CL=2)
100MHz(CL=3)
Interface
Package
K4S510732B-TC/L75
K4S510732B-TC/L1H
K4S510732B-TC/L1L
LVTTL
54pin
TSOP(II)
32Mx8
32Mx8
A0~A12,BA0,BA1
DQ0 ~ DQ7
CLK,CAS,RAS
/WE,DQM
/CS1,CKE1
/CS0,CKE0
*
Samsung Electronics reserves the right to change products or specification without notice.
Staktek’s stacking technology is Samsung’s stacking technology of choice.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S510732B-TL75 | Stacked 512Mbit SDRAM |
| K4S510832M | 16M x 8bit x 4 Banks Synchronous DRAM LVTTL |
| K4S510832M-TL75 | 16M x 8bit x 4 Banks Synchronous DRAM LVTTL |
| K4S510832M-TC1H | 16M x 8bit x 4 Banks Synchronous DRAM LVTTL |
| K4S510832M-TC75 | 16M x 8bit x 4 Banks Synchronous DRAM LVTTL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S510732B-TL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 512Mbit SDRAM |
| K4S510832B-CL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb B-die SDRAM Specification |
| K4S510832B-TC75 | 制造商:Samsung Semiconductor 功能描述: |
| K4S510832B-TCL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb B-die SDRAM Specification |
| K4S510832B-UC75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb B-die SDRAM Specification |
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