- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374279 > K4S510732B-TL1H (SAMSUNG SEMICONDUCTOR CO. LTD.) Stacked 512Mbit SDRAM PDF資料下載
參數(shù)資料
| 型號： | K4S510732B-TL1H |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Stacked 512Mbit SDRAM |
| 中文描述： | 堆積512兆內(nèi)存 |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 116K |
| 代理商： | K4S510732B-TL1H |
K4S510732B
CMOS SDRAM
Rev. 0.0 Feb.2001
Preliminary
DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Notes
Output rise time
trh
Measure in linear
region : 1.2V ~1.8V
1.37
4.37
Volts/ns
3
Output fall time
tfh
Measure in linear
region : 1.2V ~1.8V
1.30
3.8
Volts/ns
3
Output rise time
trh
Measure in linear
region : 1.2V ~1.8V
2.8
3.9
5.6
Volts/ns
1,2
Output fall time
tfh
Measure in linear
region : 1.2V ~1.8V
2.0
2.9
5.0
Volts/ns
1,2
1. Rise time specification based on 0pF + 50 Ohms to V
SS
, use these values to design to.
2. Fall time specification based on 0pF + 50 Ohms to V
DD
, use these values to design to.
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to V
SS
.
Notes :
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
Parameter
Symbol
-75
-1H
-1L
Unit
Note
Min
Max
Min
Max
Min
Max
CLK cycle time
CAS latency=3
t
CC
7.5
1000
10
1000
10
1000
ns
1
CAS latency=2
-
10
12
CLK to valid
output delay
CAS latency=3
t
SAC
5.4
6
6
ns
1,2
CAS latency=2
-
6
7
Output data
hold time
CAS latency=3
t
OH
3
3
3
ns
2
CAS latency=2
-
3
3
CLK high pulse width
t
CH
2.5
3
3
ns
3
CLK low pulse width
t
CL
2.5
3
3
ns
3
Input setup time
t
SS
1.5
2
2
ns
3
Input hold time
t
SH
0.8
1
1
ns
3
CLK to output in Low-Z
t
SLZ
1
1
1
ns
2
CLK to output
in Hi-Z
CAS latency=3
t
SHZ
5.4
6
6
ns
CAS latency=2
-
6
7
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Notes :
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S510732B-TL1L | Stacked 512Mbit SDRAM |
| K4S510732B-TL75 | Stacked 512Mbit SDRAM |
| K4S510832M | 16M x 8bit x 4 Banks Synchronous DRAM LVTTL |
| K4S510832M-TL75 | 16M x 8bit x 4 Banks Synchronous DRAM LVTTL |
| K4S510832M-TC1H | 16M x 8bit x 4 Banks Synchronous DRAM LVTTL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S510732B-TL1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 512Mbit SDRAM |
| K4S510732B-TL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Stacked 512Mbit SDRAM |
| K4S510832B-CL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb B-die SDRAM Specification |
| K4S510832B-TC75 | 制造商:Samsung Semiconductor 功能描述: |
| K4S510832B-TCL75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512Mb B-die SDRAM Specification |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。