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參數(shù)資料
| 型號(hào)： | K4S283233F-FHE |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| 中文描述： | 100萬(wàn)x 32Bit的× 4銀行在90FBGA移動(dòng)SDRAM |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大?。?/td> | 140K |
| 代理商： | K4S283233F-FHE |
K4S283233F - F(H)E/N/G/C/L/F
February 2004
Mobile-SDRAM
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
NOTES:
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then rounding off to the next
higher integer.
2. Minimum delay is required to complete write.
3. Minimum tRDL=2CLK and tDAL(= tRDL + tRP) is required to complete both of last data write command(tRDL) and precharge command(tRP).
4. All parts allow every cycle column address change.
5. In case of row precharge interrupt, auto precharge and read burst stop.
Parameter
Symbol
Version
Unit
Note
-60
-75
-1H
-1L
Row active to row active delay
t
RRD
(min)
12
15
19
19
ns
1
RAS to CAS delay
t
RCD
(min)
18
19
19
24
ns
1
Row precharge time
t
RP
(min)
18
19
19
24
ns
1
Row active time
t
RAS
(min)
42
45
50
60
ns
1
t
RAS
(max)
100
us
Row cycle time
t
RC
(min)
60
64
69
84
ns
1
Last data in to row precharge
t
RDL
(min)
2
CLK
2
Last data in to Active delay
t
DAL
(min)
tRDL + tRP
-
3
Last data in to new col. address delay
t
CDL
(min)
1
CLK
2
Last data in to burst stop
t
BDL
(min)
1
CLK
2
Col. address to col. address delay
t
CCD
(min)
1
CLK
4
Number of valid output data
CAS latency=3
2
ea
5
Number of valid output data
CAS latency=2
-
1
Number of valid output data
CAS latency=1
-
0
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| K4S283233F | 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
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| K4S283233F-G | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
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| K4S283233F-N | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
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