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參數(shù)資料
| 型號(hào)： | K4J52324QC-BJ14 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Mbit GDDR3 SDRAM |
| 中文描述： | 512MB的GDDR3 SDRAM的 |
| 文件頁數(shù)： | 56/57頁 |
| 文件大?。?/td> | 1246K |
| 代理商： | K4J52324QC-BJ14 |
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- 56 -
Rev 1.0 (Mar 2005)
512M GDDR3 SDRAM
K4J52324QC-B
AC CHARACTERISTICS II-I
Parameter
Symbol
-BJ12
-BJ14
Unit
Note
Min
25
35
45
12
8
10
8
40
11
6
7
21
20000
7tCK
+tIS
-
Max
100K
-
-
-
-
-
-
-
-
-
-
-
-
Min
22
31
39
10
6
9
8
40
10
5
6
19
20000
6tCK
+tIS
-
Max
100K
-
-
-
-
-
-
-
-
-
-
-
-
Row active time
Row cycle time
Refresh row cycle time
RAS to CAS delay for Read
RAS to CAS delay for Write
Row precharge time
Row active to Row active
Four activate window
Last data in to Row precharge (PRE or Auto-PRE) t
WR
Last data in to Read command
Mode register set cycle time
Auto precharge write recovery time + Precharge
Exit self refresh to Read command
t
RAS
t
RC
t
RFC
t
RCDR
t
RCDW
t
RP
t
RRD
t
FAW
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
t
CDLR
t
MRD
t
DAL
t
XSR
Power-down exit time
t
PDEX
-
-
tCK
Refresh interval time
t
REF
3.9
3.9
us
AC CHARACTERISTICS II-II
Parameter
Symbol
-BC14
-BC16
-BC20
Unit
Note
Min
22
31
39
10
6
9
8
40
10
5
6
19
20000
6tCK
+tIS
-
Max
100K
-
-
-
-
-
-
-
-
-
-
-
-
Min
19
28
33
10
6
9
7
35
9
4
5
18
20000
6tCK
+tIS
-
Max
100K
-
-
-
-
-
-
-
-
-
-
-
-
Min
15
22
27
8
5
7
5
25
7
3
4
14
20000
4tCK
+tIS
-
Max
100K
-
-
-
-
-
Row active time
Row cycle time
Refresh row cycle time
RAS to CAS delay for Read
RAS to CAS delay for Write
Row precharge time
Row active to Row active
Four activate window
Last data in to Row precharge (PRE or Auto-PRE) t
WR
Last data in to Read command
Mode register set cycle time
Auto precharge write recovery time + Precharge
Exit self refresh to Read command
t
RAS
t
RC
t
RFC
t
RCDR
t
RCDW
t
RP
t
RRD
t
FAW
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
-
-
-
-
-
-
t
CDLR
t
MRD
t
DAL
t
XSR
Power-down exit time
t
PDEX
-
-
-
tCK
Refresh interval time
t
REF
3.9
3.9
3.9
us
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PDF描述 |
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| K4M281633F-C | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M281633F-F1L | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M281633F-G | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M281633F-L | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4J52324QE-BC12000 | 制造商:Samsung Semiconductor 功能描述: |
| K4J52324QE-BC14000 | 制造商:Samsung Semiconductor 功能描述: |
| K4J52324QE-BC16000 | 制造商:Samsung Semiconductor 功能描述:GDDR3 SDRAM X32 BOC - Trays |
| K4J52324QH-AC14000 | 制造商:Samsung Semiconductor 功能描述:GDDR3 SDRAM X32 BOC LEAD PART 10W - Trays |
| K4J55323QF-GC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit GDDR3 SDRAM |
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