- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374275 > K4J52324QC-BJ14 (SAMSUNG SEMICONDUCTOR CO. LTD.) 512Mbit GDDR3 SDRAM PDF資料下載
參數(shù)資料
| 型號： | K4J52324QC-BJ14 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512Mbit GDDR3 SDRAM |
| 中文描述： | 512MB的GDDR3 SDRAM的 |
| 文件頁數(shù)： | 53/57頁 |
| 文件大?。?/td> | 1246K |
| 代理商： | K4J52324QC-BJ14 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁當(dāng)前第53頁第54頁第55頁第56頁第57頁
- 53 -
Rev 1.0 (Mar 2005)
512M GDDR3 SDRAM
K4J52324QC-B
DC CHARACTERISTICS-I
(
0
°
C
≤
Tc
≤85°
C ; VDD=2.0V + 0.1V, VDDQ=2.0V + 0.1V
)
(
0
°
C
≤
Tc
≤85°
C ; VDD=1.8V + 0.1V, VDDQ=1.8V + 0.1V
)
Note : 1. Measured with outputs open and ODT off
2. Refresh period is 32ms
Parameter
Symbol
Test Condition
Version
Unit
-BJ12
-BJ14
Operating Current
(One Bank Active)
I
CC1
Burst Length=4
t
RC
≥
t
RC
(min)
I
OL
=0mA,
t
CC
=
t
CC
(min)
510
490
mA
Precharge Standby Current
in Power-down mode
I
CC2
P
CKE
≤
V
IL
(max),
t
CC
=
t
CC
(min)
120
110
mA
Precharge Standby Current
in Non Power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min),
t
CC
=
t
CC
(min)
270
240
mA
Active Standby Current
power-down mode
I
CC3
P
CKE
≤
V
IL
(max),
t
CC
=
t
CC
(min)
140
130
mA
Active Standby Current in
in Non Power-down mode
I
CC3
N
CKE
≥
VIH(min), CS
≥
VIH(min),
t
CC
=
t
CC
(min)
420
400
mA
Operating Current
( Burst Mode)
I
CC4
I
OL
=0mA ,
t
CC
=
t
CC
(min),
Page Burst, All Banks activated.
1075
980
mA
Refresh Current
I
CC5
t
RC
≥
t
RFC
525
500
mA
Self Refresh Current
I
CC6
CKE
≤
0.2V
50
50
mA
Operating Current
(4Bank interleaving)
I
CC7
Burst Length=4
t
RC
≥
t
RC
(min)
I
OL
=0mA,
t
CC
=
t
CC
(min)
1195
1100
mA
Parameter
Symbol
Test Condition
Version
Unit
-BC14
-BC16
-BC20
Operating Current
(One Bank Active)
I
CC1
Burst Length=4
t
RC
≥
t
RC
(min)
I
OL
=0mA,
t
CC
=
t
CC
(min)
420
410
400
mA
Precharge Standby Current
in Power-down mode
I
CC2
P
CKE
≤
V
IL
(max),
t
CC
=
t
CC
(min)
90
85
80
mA
Precharge Standby Current
in Non Power-down mode
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min),
t
CC
=
t
CC
(min)
200
190
170
mA
Active Standby Current
power-down mode
I
CC3
P
CKE
≤
V
IL
(max),
t
CC
=
t
CC
(min)
110
100
95
mA
Active Standby Current in
in Non Power-down mode
I
CC3
N
CKE
≥
VIH(min), CS
≥
VIH(min),
t
CC
=
t
CC
(min)
320
315
310
mA
Operating Current
( Burst Mode)
I
CC4
I
OL
=0mA ,
t
CC
=
t
CC
(min),
Page Burst, All Banks activated.
830
760
655
mA
Refresh Current
I
CC5
t
RC
≥
t
RFC
480
460
440
mA
Self Refresh Current
I
CC6
CKE
≤
0.2V
50
50
50
mA
Operating Current
(4Bank interleaving)
I
CC7
Burst Length=4
t
RC
≥
t
RC
(min)
I
OL
=0mA,
t
CC
=
t
CC
(min)
935
860
830
mA
DC CHARACTERISTICS-II
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4M281633F | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M281633F-C | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M281633F-F1L | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M281633F-G | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M281633F-L | 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4J52324QE-BC12000 | 制造商:Samsung Semiconductor 功能描述: |
| K4J52324QE-BC14000 | 制造商:Samsung Semiconductor 功能描述: |
| K4J52324QE-BC16000 | 制造商:Samsung Semiconductor 功能描述:GDDR3 SDRAM X32 BOC - Trays |
| K4J52324QH-AC14000 | 制造商:Samsung Semiconductor 功能描述:GDDR3 SDRAM X32 BOC LEAD PART 10W - Trays |
| K4J55323QF-GC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit GDDR3 SDRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。