參數(shù)資料
型號(hào): K4J52324QC-BJ12
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512Mbit GDDR3 SDRAM
中文描述: 512MB的GDDR3 SDRAM的
文件頁(yè)數(shù): 23/57頁(yè)
文件大?。?/td> 1246K
代理商: K4J52324QC-BJ12
- 23 -
Rev 1.0 (Mar 2005)
512M GDDR3 SDRAM
K4J52324QC-B
SCAN AC ELECTRICAL CHARACTERISTICS
*Note : 1. The parameter applies only when SEN is asserted.
2. Scan Enable should be issued earlier than other Scan Commands by 3ns.
PARAMETER/CONDITON
SYMBOL
MIN
MAX
UNITS
NOTES
Clock
Clock cycle time
Scan Command Time
Scan enable setup time
Scan enable hold time
Scan command setup time for SSH, SOE# and SOUT
Scan command hold time for SSH, SOE# and SOUT
Scan Capture Time
Scan capture setup Time
Scan capture hold Time
Scan Shift Time
Scan clock to valid scan output
Scan clock to scan output hold
tSCK
40
-
ns
1
tSES
tSEH
tSCS
tSCH
20
20
14
14
-
-
-
-
ns
ns
ns
ns
1,2
1
1
1
tSDS
tSCH
10
10
-
-
ns
ns
1
1
tSAC
tSOH
-
6
-
ns
ns
1
1
1.5
tATS
tATS
tSCS
tSCH
tSCS
tSCH
tSDS tSDH
VALID
tSDS tSDH
VALID
tSES
tSDS tSDH
VALID
tSCS
T = 200us
RESET at power - up
Boundary Scan Mode
Scan Out
tSCS
VDD
VDDQ
VREF
RES
(SSH in Scan Mode)
CKE
(Dual-load C/A)
CKE
(Quad-load C/A)
SEN
SCK
SOE#
SOUT
Pins Under Test
Note : To set the pre-defined ODT for C/A, a boundary scan mode should be issued after an appropriate ODT initialization sequence with RES and CKE signals
Figure 4. Scan Initialization Sequence
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