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參數(shù)資料
| 型號： | K4H561638F |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mb F-die DDR SDRAM Specification |
| 中文描述： | 256Mb的的F - DDR SDRAM內(nèi)存芯片規(guī)格 |
| 文件頁數(shù)： | 20/23頁 |
| 文件大?。?/td> | 329K |
| 代理商： | K4H561638F |
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Rev. 1.3 October, 2004
Figure 3. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
Maximum
Typical High
Minumum
Typical Low
Vout(V)
I
-220
-200
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
0.0
1.0
2.0
Minimum
Typical Low
Typical High
Maximum
0
20
40
60
80
100
120
140
160
0.0
0.5
1.0
1.5
2.0
2.5
I
Vout(V)
Pullup Characteristics for Full Strength Output Driver
Pulldown Characteristics for Full Strength Output Driver
IBIS :I/V Characteristics for Input and Output Buffers
DDR SDRAM Output Driver V-I Characteristics
DDR SDRAM Output driver characteristics are defined for full and half strength operation as selected by the EMRS bit A1.
Figures 3 and 4 show the driver characteristics graphically, and tables 8 and 9 show the same data in tabular format suitable for input
into simulation tools. The driver characteristcs evaluation conditions are:
Typical
25×C
Vdd/Vddq = 2.5V, typical process
Minimum
70×C
Vdd/Vddq = 2.3V, slow-slow process
Maximum
0×C
Vdd/Vddq = 2.7V, fast-fast process
Output Driver Characteristic Curves Notes:
1. The full variation in driver current from minimum to maximum process, temperature and voltage will lie within the outer bounding lines
the of the V-I curve of Figure 3 and 4.
2. It is recommended that the "typical" IBIS V-I curve lie within the inner bounding lines of the V-I curves of Figure 3 and 4.
3. The full variation in the ratio of the "typical" IBIS pullup to "typical" IBIS pulldown current should be unity
+/-
10%, for device drain to
source voltages from 0.1 to1.0. This specification is a design objective only. It is not guaranteed.
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