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參數(shù)資料
| 型號： | K4H561638D-GCA2 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DIODE ZENER SINGLE 200mW 28Vz 0.05mA-Izt 0.05 0.05uA-Ir 21.2 SOD-323 3K/REEL |
| 中文描述： | 的DDR 256Mb的 |
| 文件頁數(shù)： | 13/18頁 |
| 文件大?。?/td> | 168K |
| 代理商： | K4H561638D-GCA2 |
DDR SDRAM
DDR SDRAM 256Mb D-die (x8, x16)
Rev. 1.1 Feb. 2003
Overshoot/Undershoot specification for Data, Strobe, and Mask Pins
Parameter
Specification
DDR400
1.2V
1.2V
2.5V-ns
2.5V-ns
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
5
4
3
2
1
0
-1
-2
-3
-4
-5
0
0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
VDDQ
Overshoot
Maximum Amplitude = 1.2V
Area = 2.5V-ns
Maximum Amplitude = 1.2V
undershoot
GND
V
Tims(ns)
DQ/DM/DQS AC overshoot/Undershoot Definition
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4H561638D-GCB0 | DIODE ZENER SINGLE 500mW 30Vz 0.05mA-Izt 0.05 0.05uA-Ir 22.8 SOD-123 3K/REEL |
| K4H561638D-GCB3 | DIODE ZENER SINGLE 150mW 30Vz 0.05mA-Izt 0.05 0.05uA-Ir 22.8 SOD-523 3K/REEL |
| K4H561638D-GLA2 | DIODE ZENER SINGLE 200mW 33Vz 0.05mA-Izt 0.05 0.05uA-Ir 25 SOD-323 3K/REEL |
| K4H561638D-GLB0 | DIODE ZENER SINGLE 200mW 36Vz 0.05mA-Izt 0.05 0.05uA-Ir 27.3 SOD-323 3K/REEL |
| K4H561638D-GLB3 | DIODE ZENER SINGLE 200mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOD-323 3K/REEL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H561638D-GCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR 256Mb |
| K4H561638D-GCB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR 256Mb |
| K4H561638D-GLA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR 256Mb |
| K4H561638D-GLB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR 256Mb |
| K4H561638D-GLB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:DDR 256Mb |
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