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參數(shù)資料
| 型號： | K4H560838E-TCAA |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mb E-die DDR SDRAM Specification 66 TSOP-II |
| 中文描述： | 256Mb的電子芯片DDR SDRAM內(nèi)存規(guī)格66 TSOP-II |
| 文件頁數(shù)： | 24/24頁 |
| 文件大小： | 214K |
| 代理商： | K4H560838E-TCAA |
DDR SDRAM
DDR SDRAM 256Mb E-die (x4, x8)
Rev. 1.3 April. 2005
Pulldown Current (mA)
pullup Current (mA)
Voltage
(V)
Typical
Low
3.4
6.9
10.3
13.6
16.9
19.6
22.3
24.7
26.9
29.0
30.6
31.8
32.8
33.5
34.0
34.3
34.5
34.8
35.1
35.4
35.6
35.8
36.1
36.3
36.5
36.7
36.8
Typical
High
3.8
7.6
11.4
15.1
18.7
22.1
25.0
28.2
31.3
34.1
36.9
39.5
42.0
44.4
46.6
48.6
50.5
52.2
53.9
55.0
56.1
57.1
57.7
58.2
58.7
59.2
59.6
Minimum
Maximum
Typical
Low
-3.5
-6.9
-10.3
-13.6
-16.9
-19.4
-21.5
-23.3
-24.8
-26.0
-27.1
-27.8
-28.3
-28.6
-28.7
-28.9
-28.9
-29.0
-29.2
-29.2
-29.3
-29.5
-29.5
-29.6
-29.7
-29.8
-29.9
Typical
High
-4.3
-8.2
-12.0
-15.7
-19.3
-22.9
-26.5
-30.1
-33.6
-37.1
-40.3
-43.1
-45.8
-48.4
-50.7
-52.9
-55.0
-56.8
-58.7
-60.0
-61.2
-62.4
-63.1
-63.8
-64.4
-65.1
-65.8
Minimum
Maximum
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.6
5.2
7.8
10.4
13.0
15.7
18.2
20.8
22.4
24.1
25.4
26.2
26.6
26.8
27.0
27.2
27.4
27.7
27.8
28.0
28.1
28.2
28.3
28.3
28.4
28.5
28.6
5.0
9.9
14.6
19.2
23.6
28.0
32.2
35.8
39.5
43.2
46.7
50.0
53.1
56.1
58.7
61.4
63.5
65.6
67.7
69.8
71.6
73.3
74.9
76.4
77.7
78.8
79.7
-2.6
-5.2
-7.8
-10.4
-13.0
-15.7
-18.2
-20.4
-21.6
-21.9
-22.1
-22.2
-22.3
-22.4
-22.6
-22.7
-22.7
-22.8
-22.9
-22.9
-23.0
-23.0
-23.1
-23.2
-23.2
-23.3
-23.3
-5.0
-9.9
-14.6
-19.2
-23.6
-28.0
-32.2
-35.8
-39.5
-43.2
-46.7
-50.0
-53.1
-56.1
-58.7
-61.4
-63.5
-65.6
-67.7
-69.8
-71.6
-73.3
-74.9
-76.4
-77.7
-78.8
-79.7
Table 9. Weak Driver Characteristics
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4H560838E-TCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II |
| K4H560838E-TCB3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II |
| K4H560838E-TLA0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM |
| K4H560838E-TLA2 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II |
| K4H560838E-TLAA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 66 TSOP-II |
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