參數(shù)資料
型號(hào)： K4H560438E-GCB0
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL
中文描述： 256Mb的電子芯片DDR SDRAM內(nèi)存規(guī)格60Ball FBGA封裝（x4/x8）
文件頁(yè)數(shù)： 21/26頁(yè)
文件大?。?/td> 291K
代理商： K4H560438E-GCB0
- 21 -
DDR SDRAM
Rev. 2.2 Mar. ’03
K4H561638D
4M x 16Bit x 4 Banks Double Data Rate SDRAM
The K4H561638D is 268,435,456 bits of double data rate synchronous DRAM organized as 4 x 4,194,304 words by 16 bits, fabricated
with SAMSUNG
′
s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to
333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and
programmable latencies allow the device to be useful for a variety of high performance memory system applications.
GENERAL DESCRIPTION
Absolute Maximum Rating
Parameter
Symbol
VIN, VOUT
VDD, VDDQ
TSTG
PD
IOS
Value
-0.5 ~ 3.6
-1.0 ~ 3.6
-55 ~ +150
1.5
50
Unit
V
V
°
C
W
mA
Voltage on any pin relative to VSS
Voltage on VDD & VDDQ supply relative to VSS
Storage temperature
Power dissipation
Short circuit current
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability
DC Operating Conditions
Recommended operating conditions(Voltage referenced to V
SS
=0V, T
A
= 0 to 70
°
C)
Parameter
Symbol
Min
Max
Unit
Note
Supply voltage(for device with a nominal V
DD
of 2.5V)
V
DD
2.3
2.7
I/O Supply voltage
V
DDQ
2.3
2.7
V
I/O Reference voltage
V
REF
VDDQ/2-50mV
VDDQ/2+50mV
V
1
I/O Termination voltage(system)
V
TT
V
REF
-0.04
V
REF
+0.04
V
2
Input logic high voltage
V
IH
(DC)
V
REF
+0.15
V
DDQ
+0.3
V
4
Input logic low voltage
V
IL
(DC)
-0.3
V
REF
-0.15
V
4
Input Voltage Level, CK and CK inputs
V
IN
(DC)
-0.3
V
DDQ
+0.3
V
Input Differential Voltage, CK and CK inputs
V
ID
(DC)
0.3
V
DDQ
+0.6
V
3
Input crossing point voltage, CK and CK inputs
V
IX
(DC)
1.15
1.35
V
5
Input leakage current
I
I
-2
2
uA
Output leakage current
I
OZ
-5
5
uA
Output High Current(Normal strengh driver)
;V
OUT
= V
TT
+ 0.84V
I
OH
-16.8
mA
Output High Current(Normal strengh driver)
;V
OUT
= V
TT
- 0.84V
I
OL
16.8
mA
Output High Current(Half strengh driver)
;V
OUT
=
V
TT
+ 0.45V
I
OH
-9
mA
Output High Current(Half strengh driver)
;V
OUT
= V
TT
- 0.45V
I
OL
9
mA
相關(guān)PDF資料
PDF描述
K4H560438E-GCB3 DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL
K4H560438E-GCC4 DIODE ZENER SINGLE 300mW 27Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-23 3K/REEL
K4H560438E-GCCC DIODE ZENER SINGLE 300mW 29.8Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-23 3K/REEL
K4H560438E-GLA2 DIODE ZENER SINGLE 300mW 33Vz 5mA-Izt 0.02503 0.05uA-Ir 27 SOT-23 3K/REEL
K4H560438E-NCA2 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H560438E-GCB3 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
K4H560438E-GCC4 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
K4H560438E-GCCC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
K4H560438E-GLA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
K4H560438E-GLB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
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