參數(shù)資料
型號(hào)： K4H511638D-LCC
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： DIODE ZENER SINGLE 500mW 9.1Vz 20mA-Izt 0.02592 0.1uA-Ir 7 SOD-123 3K/REEL
中文描述： ?的512Mb芯片與DDR SDRAM的規(guī)格鉛66 TSOP-II免費(fèi)（符合RoHS）
文件頁數(shù)： 4/24頁
文件大?。?/td> 366K
代理商： K4H511638D-LCC
Rev. 0.3 June. 2005
DDR SDRAM
DDR SDRAM 512Mb D-die (x8, x16)
Preliminary
VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333
VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)
Four banks operation
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
MRS cycle with address key programs
-. Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
Data I/O transactions on both edges of data strobe
Edge aligned data output, center aligned data input
LDM,UDM for write masking only (x16)
DM for write masking only (x4, x8)
Auto & Self refresh
7.8us refresh interval(8K/64ms refresh)
Maximum burst refresh cycle : 8
66pin TSOP II
Pb-Free
package
RoHS compliant
CC(DDR400@CL=3)
B3(DDR333@CL=2.5)
A2(DDR266@CL=2.0)
B0(DDR266@CL=2.5)
Speed @CL2
-
133MHz
133MHz
100MHz
Speed @CL2.5
166MHz
166MHz
133MHz
133MHz
Speed @CL3
200MHz
-
-
-
CL-tRCD-tRP
3-3-3
2.5-3-3
2-3-3
2.5-3-3
Part No.
Org.
Max Freq.
Interface
Package
K4H510838D-UC/LCC
64M x 8
CC(DDR400@CL=3)
SSTL2
66pin TSOP II
K4H510838D-UC/LB3
B3(DDR333@CL=2.5)
K4H510838D-UC/LA2
A2(DDR266@CL=2)
K4H510838D-UC/LB0
B0(DDR266@CL=2.5)
K4H511638D-UC/LCC
32M x 16
CC(DDR400@CL=3)
SSTL2
66pin TSOP II
K4H511638D-UC/LB3
B3(DDR333@CL=2.5)
K4H511638D-UC/LA2
A2(DDR266@CL=2)
K4H511638D-UC/LB0
B0(DDR266@CL=2.5)
1.0 Key Features
2.0 Ordering Information
3.0 Operating Frequencies
相關(guān)PDF資料
PDF描述
K4H56038D-TC 256Mb D-die DDR400 SDRAM Specification
K4H561638D-TCC4 256Mb D-die DDR400 SDRAM Specification
K4H561638D-TCCC 256Mb D-die DDR400 SDRAM Specification
K4H561638A-TCA0 DIODE ZENER SINGLE 200mW 6.8Vz 0.05mA-Izt 0.05 0.1uA-Ir 5.1 SOD-323 3K/REEL
K4H561638M-TCA0 128Mb DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H511638D-TCA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H511638D-TCA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H511638D-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H511638D-TLA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H511638D-TLA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*