參數(shù)資料
型號(hào)： K4H511638D-LCC
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： DIODE ZENER SINGLE 500mW 9.1Vz 20mA-Izt 0.02592 0.1uA-Ir 7 SOD-123 3K/REEL
中文描述： ?的512Mb芯片與DDR SDRAM的規(guī)格鉛66 TSOP-II免費(fèi)（符合RoHS）
文件頁(yè)數(shù)： 2/24頁(yè)
文件大小： 366K
代理商： K4H511638D-LCC
Rev. 0.3 June. 2005
DDR SDRAM
DDR SDRAM 512Mb D-die (x8, x16)
Preliminary
Table of Contents
1.0 Key Features ...............................................................................................................................4
2.0 Ordering Information...................................................................................................................4
3.0 Operating Frequencies................................................................................................................4
4.0 Pin Description ............................................................................................................................5
5.0 Package Physical Dimension .....................................................................................................6
6.0 Block Diagram (16Mbit x8 / 8Mbit x16 I/O x4 Banks)................................................................7
7.0 Input/Output Function Description ............................................................................................8
8.0 Command Truth Table.................................................................................................................9
9.0 General Description...................................................................................................................10
10.0 Absolute Maximum Rating .....................................................................................................10
11.0 DC Operating Conditions........................................................................................................10
12.0 DDR SDRAM Spec Items & Test Conditions.........................................................................11
13.0 Input/Output Capacitance ......................................................................................................11
14.0 Detailed test condition for DDR SDRAM IDD1 & IDD7A ......................................................12
15.0 DDR SDRAM IDD spec table ..................................................................................................13
16.0 AC Operating Conditions .......................................................................................................14
17.0 AC Overshoot/Undershoot specification for Address and Control Pins............................14
18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins...............................15
19.0 AC Timming Parameters & Specifications ...........................................................................16
20.0 System Characteristics for DDR SDRAM ..............................................................................17
21.0 Component Notes....................................................................................................................18
22.0 System Notes...........................................................................................................................20
23.0 IBIS : I/V Characteristics for Input and Output Buffers........................................................21
相關(guān)PDF資料
PDF描述
K4H56038D-TC 256Mb D-die DDR400 SDRAM Specification
K4H561638D-TCC4 256Mb D-die DDR400 SDRAM Specification
K4H561638D-TCCC 256Mb D-die DDR400 SDRAM Specification
K4H561638A-TCA0 DIODE ZENER SINGLE 200mW 6.8Vz 0.05mA-Izt 0.05 0.1uA-Ir 5.1 SOD-323 3K/REEL
K4H561638M-TCA0 128Mb DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K4H511638D-TCA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H511638D-TCA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H511638D-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H511638D-TLA0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
K4H511638D-TLA2 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mb DDR SDRAM
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